Electron beam defect scanner matching degree test structure and test method

Abstract

The invention relates to the technical field of semiconductors and discloses a testing structure for the matching degree of an electron beam flaw scanner. The testing structure comprises a first gray scale testing module, a second gray scale testing module and a third gray scale testing module which respectively comprise a metal connection through hole with a first gray scale, a metal connection through hole with a second gray scale and a metal connection through hole with a third gray scale; metal connection through hole structures with different scanning gray scales in a conventional semiconductor device are basically covered; and detection conditions of various through hole structures in wafers to be detected by the electron beam flaw scanner can be reflected sufficiently. The invention further provides a testing method for the matching degree of the electron beam flaw scanner based on the testing structure; different electron beam flaw scanners adopt the same picture snapping forms and the different wafers are selected; and first gray scale information, second gray scale information and third gray scale information of scanning regions are respectively collected and compared so as to realize the monitoring of the matching degree of each electron beam flaw scanner on a processing line.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an electron beam defect scanner matching degree test structure and a test method for defect detection in the semiconductor process. Background technique [0002] With the development of integrated circuit technology, the feature size continues to be scaled down, and the complexity of semiconductor manufacturing is also increasing. Under this development trend, the application of electron beam defect scanner (E-Beam defect scan tool) in semiconductor process is also more and more extensive. At present, electron beam defect detection technology is a detection method that uses an electron beam defect scanner to detect defects with a precisely focused electron beam. The detection process is as follows: 1) Electron beams are generated by high voltage, irradiated on the wafer, and secondary electrons, backscattered electrons and Auger electrons are excited (mainly secondary ele...

AI Technical Summary

Problems solved by technology

Since the detection results of electron beam defect scanners are basically analyzed with grayscale data, the difference in grayscale before and after scanning the standard wafer to be tested will cause certain deviations in the scanning results of successive electron beam defect scanners, which cannot Accurately reflect the matching degree of multiple electron beam defect scanners, thus affecting the reliability and stability of online defect data

Images