Three-dimensional amrmems three-axis magnetometer structure and magnetometer
A three-axis magnetic, three-dimensional technology, applied in measuring devices, mapping and navigation, compasses, etc., can solve the problems of large device area and ineffective use of trench sidewalls, etc.
Active Publication Date: 2017-07-11
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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[0011] However, if figure 1 As shown, according to the three-dimensional AMRMEMS three-axis magnetometer structure of the prior art, the anisotropic magnetoresistive material 40 is generally only formed on one side of the oxide trench, thus the trench sidewall formed by the oxide cannot be effectively utilized, so that the device larger area
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[0027] In order to make the content of the present invention clearer and easier to understand, the content of the present invention will be described in detail below in conjunction with specific embodiments and accompanying drawings.
[0028] figure 2 The structure of a three-dimensional AMR MEMS three-axis magnetometer according to a preferred embodiment of the present invention is schematically shown.
[0029] Such as figure 2 Shown, according to the three-dimensional AMRMEMS three-axis magnetometer structure of preferred embodiment of the present invention comprises:
[0030] NiFe anisotropic magnetoresistive material arranged on a predetermined plane, said anisotropic magnetoresistive material film layer forms the X-axis and Y-axis of the three-axis magnetometer structure; then form electrode parts (used as barber electrodes) on the magnetoresistive material ), used to change the direction of the current in order to take advantage of the anisotropic magnetoresistance e...
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The invention provides an AMRMEMS (Anisotropic Magneto Resistive Micro-Electro-Mechanical System) three-axis magnetometer structure and a magnetometer which are manufactured based on NiFe AMR characteristics. The three-axis magnetometer structure comprises anisotropic magneto resistive materials arranged on a predetermined plane, an oxide groove and anisotropic magneto resistive materials arranged on the two side walls, parallel to the length directions of electrode components, of the oxide groove, wherein the anisotropic magneto resistive materials arranged on the predetermined plane are used for forming the X axis and the Y axis of the three-axis magnetometer structure, then the electrode components are formed on the magneto resistive materials, are used as barber electrodes and are used for changing the direction of electric currents, so that the anisotropic magneto resistive effect of the AMR materials is utilized; the side walls of the oxide groove are perpendicular to the predetermined plane; and the magneto resistive materials arranged on the two side walls of the oxide groove are used for forming the Z axis of the three-axis magnetometer structure.
Description
technical field [0001] The invention relates to the field of semiconductor manufacturing, more specifically, the invention relates to a three-dimensional AMRMEMS three-axis magnetometer structure made based on NiFeAMR characteristics and a three-dimensional AMRMEMS three-axis magnetometer comprising the three-axis magnetometer structure. Background technique [0002] Micro-Electro-Mechanical Systems (MEMS, Micro-Electro-Mechanical Systems) is an industrial technology that integrates microelectronics technology and mechanical engineering, and its operating range is in the micron range. [0003] Nowadays, microelectromechanical systems (AMR MEMS) manufactured using the anisotropic magneto resistive (AMR, anisotropic magneto resistive) effect of FeNi have high sensitivity, good thermal stability, low material cost, and simple preparation process, and have been widely used. application. [0004] The three-dimensional AMR MEMS three-axis magnetometer is a kind of MEMS device man...
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IPC IPC(8): G01C17/32
CPCG01C17/32
Inventor 王俊杰
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP