Reading method of storage unit

Abstract

The invention provides a reading method of a storage unit. The reading method comprises the following steps: providing a corresponding compensation transistor to a to-be-detected transistor in the storage unit, wherein parameters of the compensation transistor are the same as those of the to-be-detected transistor; grounding the grid electrode and source electrode of the compensation transistor and a substrate; respectively connecting a drain electrode of the compensation transistor to a current source and an input end of a current-voltage conversion circuit, wherein the current source is used for providing a constant current to the compensation transistor; connecting the output end of the current-voltage conversion circuit to the source electrode of the to-be-detected transistor; applying a reading voltage to a word line of the to-be-detected transistor and reading a current from a position line of the to-be-detected transistor; comparing the read current with a reference current; converting the current to read storage information by virtue of a sense amplifier. According to the reading method of the storage unit, a misreading phenomenon is overcome and the reading accuracy of a charge capturing type storage unit in a radiation environment is improved.

Description

technical field [0001] The invention belongs to the technology of non-volatile memory, and in particular relates to a method for reading a storage unit. Background technique [0002] Flash memory (Flash) has the characteristic that the stored data will not be lost after power failure, and is especially suitable for the fields of mobile communication and computer storage components. Charge-trapping flash memory (take SONOS devices as an example) has a silicon-oxide layer-nitride layer-oxide layer-silicon structure, and uses tunneling effect or hot carrier injection effect to pass charges (electrons or holes) through The tunneling oxide layer is implanted into the silicon nitride layer, and is trapped by charge traps in the silicon nitride layer, thereby causing a change in the threshold voltage of the device unit to achieve the effect of data storage. Since the charge-trapping memory device uses traps in the insulating storage medium to store charge information, the leakage ...

AI Technical Summary

Problems solved by technology

In the radiation environment, due to the drift of the threshold of the device in the programmed state, the read current of the device in the programmed state will increase. At the same time, due to the increase in the leakage current of the memory array, the window caused by the radiation will become smaller and prone to Misreading of "0" and "1"

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