Gate polysilicon and polysilicon resistance integrated manufacturing method

Abstract

The invention discloses an integrated production method of grid polysilicon and polysilicon resistors. The method includes the steps that a grid dielectric layer and a first-layer polysilicon are sequentially formed on a silicon substrate; first-time ion implantation is performed to form doping of the polysilicon resistors; second-layer silicon oxide is formed on the first-layer polysilicon; etching is performed on the second-layer silicon oxide, and only the second-layer silicon oxide located on an area where the polysilicon resistors are formed are retained; ion implantation is performed to form doping of the grid polysilicon; a tungsten silicon layer is formed on the first-layer polysilicon; etching is sequentially performed on the tungsten silicon layer and the first-layer polysilicon. The grid polysilicon and the polysilicon resistors are both formed by adopting polysilicon grown in the same batch a one-time etching technology is used for etching the same polysilicon to form the grid polysilicon and the polysilicon resistors, therefore, according to the integrated production method, the process steps can be reduced, the production efficiency can be improved, and the production cost can be lowered.

Description

technical field [0001] The invention relates to a semiconductor integrated circuit manufacturing process method, in particular to an integrated manufacturing method of gate polysilicon and polysilicon resistance. Background technique [0002] In some existing processes, such as in the 0.3-0.5um logic process, a tungsten-silicon layer (WSI) grown on polysilicon is used as the gate. In the process with the above-mentioned gate structure, a high-resistance polysilicon resistor ( HR poly) is a very necessary optional process, because both the gate polysilicon and the polysilicon resistor use polysilicon, but the existing gate polysilicon and polysilicon resistor integrated manufacturing methods are generally as follows: figure 1 As shown, a substrate 101 is firstly provided, and a field oxygen 102 is formed on the substrate 101. The field oxygen 102 is a shallow trench field oxygen; the active region is isolated by the field oxygen 102; and then the gate dielectric layer and the...

AI Technical Summary

Problems solved by technology

As can be seen from the above, in the existing gate polysilicon and polysilicon resistor integrated manufacturing process, two polysilicon growths are required, that is, the growth of the polysilicon layer forming the gate polysilicon 103 and the polysilicon growth of the polysilicon resistor 106, so the manufacturing cost is relatively higher

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