Welding method for welding power semiconductor modules

A technology of power semiconductors and welding methods, which is applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve the problems of long welding time, high manufacturing cost, and large consumption, so as to improve welding efficiency, reduce production costs, and simplify The effect of the soldering step

Inactive Publication Date: 2016-11-30
XIAN YONGDIAN ELECTRIC
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Problems solved by technology

[0006] However, the existing three-step welding process of the IGBT module needs to complete three different weldings, and it takes a long time to complete the three different weldings. Therefore, the welding time of the IGBT module package is long and the efficiency is low, which is harmful to resources such as energy and special gases. The consumption is relatively large and the manufacturing cost is high

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  • Welding method for welding power semiconductor modules

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Embodiment Construction

[0015] figure 1 The flow chart of the welding method for the welding type power semiconductor module provided by the embodiment of the present invention, the specific steps of the welding method for the welding type power semiconductor module are as follows:

[0016] Step 110, disposing a first solder between the bottom plate of the soldered power semiconductor module and the ceramic layer of the ceramic substrate, and disposing a second solder between the solder layer of the ceramic substrate and the chip.

[0017] Wherein, before heating, the first solder is set between the bottom plate of the welded power semiconductor module and the ceramic layer of the ceramic substrate, and the second solder is set between the solder layer of the ceramic substrate and the chip, in order to realize the first In the welding process, the preparation for the welding between the base plate and the ceramic substrate and between the ceramic substrate and the chip is completed at one time, where...

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Abstract

The invention provides a soldering method for a soldered power semiconductor module, which includes: setting a first solder between the bottom plate of the soldered power semiconductor module and the ceramic layer of the ceramic substrate, and setting a second solder between the soldering layer of the ceramic substrate and the chip. Solder; the above-mentioned base plate, first solder, ceramic substrate, second solder and chip are placed in heating equipment and heated, so that the first solder and the second solder are melted, and the first soldering is carried out; the electrode and the second solder are completed The chips after one soldering are electrically connected to form the soldered power semiconductor module. The invention can simplify welding steps and improve welding efficiency.

Description

technical field [0001] The invention relates to a thermal processing technology, in particular to a welding method for welding power semiconductor modules. Background technique [0002] The Insulated Gate Bipolar Transistor (IGBT) module is mainly used in the main circuit inverter of the frequency converter and all inverter circuits, that is, in the DC / AC conversion. Today's new power electronic devices represented by IGBT modules are the core switching components of high-frequency power electronic circuits and control systems, and their performance parameters directly determine the efficiency and reliability of power electronic systems. It has been widely used in electric locomotives, high-voltage power transmission and transformation, electric vehicles, servo controllers, switching power supplies, chopper power supplies and other fields, and the market prospect is very good. A soldered power semiconductor module, such as an IGBT module, usually includes a base plate, a ce...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/60
Inventor 王豹子
Owner XIAN YONGDIAN ELECTRIC
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