Plasma processing equipment

Abstract

A plasma processing apparatus comprises a reaction chamber (20), an excitation radio-frequency power source (13), a direct-current power source (24), an upper electrode, and a chip support device disposed in the reaction chamber and at a position relative to the upper electrode, the upper electrode being connected to the excitation radio-frequency power source to generate plasma (10) in the reaction chamber. The chip support device comprises a tray (21) for carrying a chip and a chuck (23), a tray electrode is provided in the tray, the tray is placed on the chuck and is electrically insulated from the chuck, the tray and the chuck are both electrically insulated from the plasma, the tray electrode is electrically connected to a positive output terminal or a negative output terminal of the direct-current power source, a chuck electrode is provided in the chuck, and the chuck electrode is grounded, so that a voltage difference exists between the tray and the chuck and exists between the tray and the chip. The plasma processing apparatus is advantageous in being easy to operate, having high reliability, a simple structure and a low cost, and being not easily damaged.

Description

technical field [0001] The invention belongs to the field of semiconductor processing and relates to plasma processing equipment. Background technique [0002] ICP plasma dry etching equipment is a common equipment for processing semiconductor devices. In order to process multiple wafers at the same time, multiple wafers are often placed on the surface of a tray with a large size, and then the tray is placed on the carrying surface of the chuck of the plasma processing chamber for processing. [0003] In the actual process, the plasma will cause the temperature of the wafer to exceed the temperature required by the process, so the temperature of the wafer needs to be controlled. The traditional temperature control method is to blow refrigerant gas (such as helium) on the back of the wafer (the other side opposite to the processing surface of the wafer), and adjust the temperature of the wafer with the help of refrigerant gas. In order to fix the wafer and avoid leakage of ...

AI Technical Summary

Problems solved by technology

[0005] This way of using electrostatic force to fix the wafer S is fixed on the surface of the tray 102, but the tray 102 still needs a mechanical pressure ring 104 to fix it. It not only has a complex structure, high cost, and troublesome operation, but also the mechanical parts are easily damaged, and the maintenance work will affect the plasma. Efficiency in the use of body processing equipment

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