Piezoelectric type micro acceleration sensor

An acceleration sensor and sensor technology, applied in the direction of using inertial force for acceleration measurement, etc., can solve the problems of easy damage, poor impact resistance, etc., and achieve the effects of good repeatability, strong impact resistance, and increased flexibility

Inactive Publication Date: 2014-02-26
INST OF ELECTRONICS ENG CHINA ACAD OF ENG PHYSICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For the cantilever beam structure, the impact resistance is poor, and it is easy to be damaged when it is subjected to torsional deformation due to lateral acceleration

Method used

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  • Piezoelectric type micro acceleration sensor
  • Piezoelectric type micro acceleration sensor
  • Piezoelectric type micro acceleration sensor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] figure 1 It is an exploded view of the piezoelectric micro-acceleration sensor of the present invention, figure 2 It is a schematic structural diagram of the sensitive chip in the piezoelectric micro-acceleration sensor of the present invention, image 3 It is a top view of the sensitive chip in the piezoelectric micro-acceleration sensor of the present invention, Figure 4 for along image 3 Sectional drawing of A-A section line, Figure 5 for along image 3 Sectional drawing of the B-B section line, Image 6 It is a schematic diagram of the back of the sensitive chip in the piezoelectric micro-acceleration sensor of the present invention. exist Figure 1~6 Among them, the piezoelectric micro-acceleration sensor of the present invention includes a sensitive chip 27, an upper glass plate 29, and a lower glass plate 28; wherein, the sensitive chip 27 contains the first upper electrode 1, the second upper electrode 2, the third upper electrode 3, Fourth upper el...

Embodiment 2

[0048]The structure of this embodiment is the same as that of Embodiment 1, the difference is that the outer circle of the ring formed by the first piezoelectric layer, the third piezoelectric layer, the fifth piezoelectric layer and the seventh piezoelectric layer The diameter is 45 μm larger than the diameter of the outer circle of the ring formed by the first upper electrode, the third upper electrode, the fifth upper electrode, and the seventh upper electrode; the first piezoelectric layer, the third piezoelectric layer, the fifth The diameter of the inner circle of the ring formed by the piezoelectric layer and the seventh piezoelectric layer is 45 μm smaller than the diameter of the inner circle of the ring formed by the first upper electrode, the third upper electrode, the fifth upper electrode, and the seventh upper electrode; The diameter of the outer circle of the ring formed by the second piezoelectric layer, the fourth piezoelectric layer, the sixth piezoelectric la...

Embodiment 3

[0050] The structure of this embodiment is the same as that of Embodiment 1, the difference is that the outer circle of the ring formed by the first piezoelectric layer, the third piezoelectric layer, the fifth piezoelectric layer and the seventh piezoelectric layer The diameter is 40 μm larger than the diameter of the outer circle of the ring formed by the first upper electrode, the third upper electrode, the fifth upper electrode, and the seventh upper electrode; the first piezoelectric layer, the third piezoelectric layer, the fifth The diameter of the inner circle of the ring formed by the piezoelectric layer and the seventh piezoelectric layer is 40 μm smaller than the diameter of the inner circle of the ring formed by the first upper electrode, the third upper electrode, the fifth upper electrode, and the seventh upper electrode; The diameter of the outer circle of the ring formed by the second piezoelectric layer, the fourth piezoelectric layer, the sixth piezoelectric l...

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PUM

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Abstract

The invention provides a piezoelectric type micro acceleration sensor. The sensor comprises a sensitive chip and an upper glass plate and a lower glass plate. The sensitive chip adopts an annular structure which is symmetrical in structure. The sensitive chip comprises eight upper electrodes, eight lower electrodes, eight piezoelectric layers, a supporting membrane and a mass block in total. The eight lower electrodes are arranged on the supporting membrane. The eight piezoelectric layers are arranged on the lower electrodes. The eight upper electrodes are arranged on the piezoelectric layers. The mass block is suspended below the lower electrodes and fixedly connected with the supporting membrane. The mass block is suspended below the supporting membrane so that a movable part of the sensitive chip is formed. Circular rings formed by the electrodes and the piezoelectric layers respectively are concentric with the mass block. The sensitive chip and the upper glass plate and the lower glass plate are respectively connected via bonding. An inherent frequency of the piezoelectric type micro acceleration sensor is greater than 14.8KHz, and sensitivity is 0.62pC / g.

Description

technical field [0001] The invention belongs to the field of micro-electro-mechanical systems, and in particular relates to a piezoelectric micro-acceleration sensor, which has universality, high natural frequency and good impact resistance. Background technique [0002] Acceleration sensors are used in many different fields, such as automobiles, military industry, aerospace, consumer electronics, medical treatment, industry and so on. Some accelerometers need to work in very harsh environments, such as temperature, strong shock, electromagnetic interference, and exposure to various chemicals. This type of acceleration sensor not only needs to be able to survive in harsh environments such as shock overload, but also to be able to correctly receive shock signals. Therefore, it is necessary to develop an acceleration sensor with high safety overload, high range, high trigger sensitivity, anti-interference, and low power consumption. Piezoelectric accelerometers are highly va...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01P15/09
Inventor 孙远程姚明秋苏伟唐彬陶逢刚曲兵兵
Owner INST OF ELECTRONICS ENG CHINA ACAD OF ENG PHYSICS
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