Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Alkaline cleaning additive used after acid texturing of polycrystalline silicon wafers, and using method thereof

A polycrystalline silicon wafer, alkali cleaning technology, applied in the directions of detergent compositions, detergent compounding agents, chemical instruments and methods, etc.

Inactive Publication Date: 2014-03-05
CHANGZHOU SHICHUANG ENERGY CO LTD
View PDF7 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of the above problems, the present invention provides a polycrystalline silicon chip alkali cleaning additive and its use method, which can solve the cleaning problem of the silicon chip surface, making polycrystalline texturing The additive can improve the conversion efficiency of the cell while reducing the reflectivity of the silicon wafer
After alkali cleaning, there are still organic residues on the surface of the silicon wafer, which makes it difficult to dry the silicon wafer after texturing, and it is easy to introduce metal pollution; at the same time, porous silicon has an impact on the process links such as diffusion and silicon nitride coating, resulting in parallel resistance and The reduction of open circuit voltage affects the improvement of efficiency, and the present invention can solve this problem well

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Alkaline cleaning additive used after acid texturing of polycrystalline silicon wafers, and using method thereof
  • Alkaline cleaning additive used after acid texturing of polycrystalline silicon wafers, and using method thereof
  • Alkaline cleaning additive used after acid texturing of polycrystalline silicon wafers, and using method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] An alkali cleaning additive for acid texturing of polycrystalline silicon wafers and a method of use thereof, the process steps are as follows:

[0025] 1) Prepare alkaline cleaning additives: Add 0.1g of Span-80, 0.6g of Tween-40, and 0.3g of lauryl polyethylene glycol ether into deionized water to obtain 100g of alkaline cleaning additive solution.

[0026] 2) Prepare alkaline cleaning solution: dissolve 1.5kg of NaOH in deionized water to obtain 50kg of alkaline solution; dissolve 100g of alkaline cleaning additive prepared in step 1) in the alkaline solution to obtain alkaline cleaning solution.

[0027] 3) Alkali cleaning: immerse the acid-textured polysilicon wafer in the alkali cleaning solution prepared in step 2) for surface alkali cleaning, the temperature of the alkali cleaning is 25° C., and the time of alkali cleaning is 25 s.

[0028] After conventional cleaning and cleaning after adding the alkaline cleaning additive of the present invention, the efficien...

Embodiment 2

[0033] An alkali cleaning additive for acid texturing of polycrystalline silicon wafers and a method of use thereof, the process steps are as follows:

[0034] 1) Prepare alkaline cleaning additives: add 0.5g of Span-80, 2.5g of Tween-40, and 1.5g of lauryl polyethylene glycol ether into deionized water to obtain 100g of alkaline cleaning additive solution.

[0035] 2) Prepare alkaline cleaning solution: dissolve 0.5kg of NaOH in deionized water to obtain 5kg of alkaline solution; dissolve 100g of alkaline cleaning additive prepared in step 1) in the alkaline solution to obtain alkaline cleaning solution.

[0036] 3) Alkali cleaning: immerse the acid-textured polysilicon wafer in the alkali cleaning solution prepared in step 2) to perform surface alkali cleaning, the temperature of the alkali cleaning is 45° C., and the alkali cleaning time is 10 s.

[0037] After conventional cleaning and cleaning after adding the alkaline cleaning additive of the present invention, the effec...

Embodiment 3

[0041] An alkali cleaning additive for acid texturing of polycrystalline silicon wafers and a method of use thereof, the process steps are as follows:

[0042] 1) Prepare alkaline cleaning additives: add 0.3g of Span-80, 1.5g of Tween-40, and 1g of lauryl polyethylene glycol ether into deionized water to obtain 100g of alkaline cleaning additive solution.

[0043] 2) Prepare alkaline cleaning solution: dissolve 1kg of NaOH in deionized water to obtain 20kg of alkaline solution; dissolve 100g of alkaline cleaning additive prepared in step 1) into the alkaline solution to obtain alkaline cleaning solution.

[0044] 3) Alkali cleaning: immerse the acid-textured polysilicon wafer in the alkali cleaning solution prepared in step 2) to perform surface alkali cleaning, the temperature of the alkali cleaning is 30° C., and the alkali cleaning time is 18 s.

[0045] After conventional cleaning and cleaning after adding the alkaline cleaning additive of the present invention, the effect...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to an alkaline cleaning additive used after acid texturing of polycrystalline silicon wafers. The alkaline cleaning additive comprises the following components in percentage by weight: 0.1 to 0.5 percent of span-80, 0.6 to 2.5 percent of tween-40, 0.3 to 1.5 percent of dodecyl polyglycol ether and the balance of water. The invention also provides a cleaning liquid for alkaline cleaning of the polycrystalline silicon wafers. The cleaning liquid comprises an alkaline solution and the alkaline cleaning additive used after acid texturing of the polycrystalline silicon wafers, wherein the mass ratio of the alkaline cleaning additive for the polycrystalline silicon wafers to the alkaline solution is (0.2-2):100; the alkaline solution is the alkaline solution of inorganic alkali or organic alkali. The cleaning liquid can be used for cleaning the residual organic matters on the surfaces of the silicon wafers in a texturing process, so that the surfaces of the silicon wafers are hydrophobic and blow-drying of the silicon wafers is facilitated; porous silicon on the surfaces of the silicon wafers can be removed in an alkaline cleaning process, so that the hidden danger that a dispersing process is unstable due to the porous silicon is eliminated and the uniformity of the subsequent silicon nitride coating film is promoted.

Description

technical field [0001] The invention relates to an alkali cleaning additive used for acid texturing of polycrystalline silicon wafers and a using method thereof, belonging to the technical field of polycrystalline silicon solar cells. Background technique [0002] During the development of the photovoltaic industry, polycrystalline silicon solar cells have attracted more and more attention. The reason is that the efficiency of polycrystalline silicon solar cells has been significantly improved while maintaining low prices, and their unit energy consumption ratio and cost performance are significantly better than those of solar cells. Monocrystalline cells, therefore, the current market share of polycrystalline cells has far exceeded that of monocrystalline cells. [0003] The mixed acid of nitric acid and hydrofluoric acid is generally used for texturing of polycrystalline cells. Generally, the reflectance of silicon wafers after texturing is generally higher than 22%, even ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C11D1/72C11D3/60C11D10/02C30B33/00
Inventor 张丽娟章圆圆王文鹏
Owner CHANGZHOU SHICHUANG ENERGY CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products