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Device for preparing SiNx dielectric film by chemical vapor deposition

A chemical vapor deposition, dielectric film technology, applied in gaseous chemical plating, metal material coating process, coating and other directions, can solve the problem of high equipment investment cost, achieve the effect of low production cost and simple structure

Inactive Publication Date: 2014-03-12
ZHONGSHAN CHUANGKE RES TECH SERVICE
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  • Abstract
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AI Technical Summary

Problems solved by technology

[0002] The traditional device for forming SiN thin film on the substrate is mainly magnetron sputtering coating equipment, the defect is that the equipment investment cost is high

Method used

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  • Device for preparing SiNx dielectric film by chemical vapor deposition

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Embodiment Construction

[0015] The present invention will be further described below in conjunction with accompanying drawing description and specific embodiment:

[0016] like figure 1 A device for chemical vapor deposition of a SiNx dielectric film shown includes a reaction chamber 1 in which a substrate mounting seat 15 is arranged, and the substrate mounting seat 15 is perpendicular to the length of the reaction chamber 1 Direction setting, a plasma excitation chamber 2 is connected to the reaction chamber 1, the opening of the plasma excitation chamber 2 faces the substrate mounting seat, and a plasma tube is connected to the plasma excitation chamber 2 3. A waveguide 4 is connected to the plasma tube 3, a magnet 5 is arranged on the waveguide 4, a first reaction gas inlet pipe 6 is connected to the plasma tube 3, and the A substrate heater 7 is arranged inside the substrate mounting base 15 , the reaction chamber 1 is connected to a vacuum device, and a second reaction gas inlet pipe 8 is conn...

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Abstract

The invention discloses a device for preparing a SiNx dielectric film by chemical vapor deposition, which is characterized by comprising a reaction chamber, wherein a substrate mounting base is arranged in the reaction chamber; the substrate mounting base is perpendicular to the length direction of the reaction chamber; the reaction chamber is connected with a plasma excitation chamber; an opening of the plasma excitation chamber is over against the substrate mounting base; the plasma excitation chamber is connected with a plasmatron; the plasmatron is connected with a waveguide tube; the waveguide tube is provided with a magnet; the plasmatron is connected with a first reaction gas inlet tube; a substrate heater is arranged in the substrate mounting base; the reaction chamber is connected with a vacuum extractor; and a second reaction gas inlet tube is connected with the reaction chamber. In order to overcome the defects in the prior art, the invention provides a device for preparing a SiNx dielectric film by chemical vapor deposition, which has the advantages of simple structure and low production cost.

Description

technical field [0001] The invention relates to a device for chemical vapor deposition of SiNx dielectric film. Background technique [0002] The traditional device for forming SiN thin film on the substrate is mainly magnetron sputtering coating equipment, the defect is that the equipment investment cost is high. Therefore, it is necessary to provide a device for forming a SiN thin film on a substrate with a simple structure and low investment cost to meet the demand. Contents of the invention [0003] The object of the present invention is to overcome the deficiencies in the prior art and provide a device for chemical vapor deposition of SiNx dielectric film with simple structure and low production cost. [0004] In order to achieve the above object, the present invention adopts the following scheme: [0005] A device for chemical vapor deposition of a SiNx dielectric film, characterized in that: it includes a reaction chamber, a substrate mounting seat is arranged in ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/511C23C16/458C23C16/455C23C16/34
Inventor 陈路玉
Owner ZHONGSHAN CHUANGKE RES TECH SERVICE
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