Negative temperature coefficient thermistor chip, thermistor and preparation method of chip
A thermistor chip, negative temperature coefficient technology, applied in thermistor and its preparation, the field of negative temperature coefficient thermistor chip, can solve the problem of reduced sensitivity of thermistor
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[0014] In this specific embodiment, the thermistor chip with a negative temperature coefficient is sintered by transition metal oxide powder, and the transition metal oxide powder includes tricobalt tetroxide Co 3 o 4 , manganese dioxide MnO 2 , Yttrium trioxide Y 2 o 3 , Chromium trioxide Cr 2 o 3 and / or titanium dioxide TiO 2 , the sum of the contents of each component is 100%.
[0015] Among them, transition metal oxides include chromium trioxide Cr 2 o 3 or titanium dioxide TiO 2 When the content ratio is (calculated by molar percentage):
[0016] co 3 o 4 , 30% to 70%;
[0017] MnO 2 , 20% to 60%;
[0018] Y 2 o 3 , greater than 0 and less than or equal to 5%;
[0019] Cr 2 o 3 (or TiO 2 ), 5% to 20%.
[0020] When transition metal oxides include chromium trioxide Cr 2 o 3 and titanium dioxide TiO 2 When the content ratio is (calculated by molar percentage):
[0021] co 3 o 4 , 40% to 60%;
[0022] MnO 2 , 30% to 50%;
[0023] Y 2 o 3 , gre...
Embodiment 1
[0028] Example 1: Co3O4, MnO2, Cr2O3, Y2O3 powders are mixed according to the ratio (mole percentage) 40%: 45%: 11%: 4% to form transition metal oxide powder, and the metal oxide powder is directly sintered to make Negative temperature coefficient thermistor chip. Wherein, the specific sintering temperature is 1200° C. to 1270° C., and the time for maintaining the sintering temperature is between 3 and 9 hours. The thermistor chip assembly that makes in this embodiment makes the thermistor of negative temperature coefficient, the structure of the thermistor that makes is as follows figure 1 shown. The specific preparation process is as follows: Surround the negative temperature coefficient thermistor chip 1 with a layer of slurry containing glass powder, sintering the glass powder slurry to make a glass protective layer 2; The two ends of the thermistor chip 1 with the glass protective layer 2 are coated with a layer of electrode paste, and the electrode paste is sintered to...
Embodiment 2
[0029] Example 2: The components in this example are the same as in Example 1, only the content of the components is different: Co3O4, MnO2, Cr2O3, and Y2O3 powders are used according to the ratio (mole percentage) 34%: 60%: 5%: 1% Mixing is performed to form transition metal oxide powders. According to the formula, the thermistor chip is prepared, and then the thermistor is obtained. The preparation process is the same as in Example 1, and will not be repeated here. It is measured that the resistivity of the thermistor in this embodiment is 3000Ω·mm, and the B value is 4050.
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