Gold and Fe Doped Negative Temperature Coefficient Single Crystal Silicon Thermistors

Abstract

The invention relates to a gold-and-iron-doped monocrystal silicon thermistor with a negative temperature coefficient. The thermistor takes metal salts of gold and iron as diffusion sources, an open-tube source coating type high-temperature gas phase diffusion method is adopted to diffuse two impurities, namely gold and iron, into N-type monocrystal silicon, a monocrystal silicon thermo-sensitive material is prepared by using the property that gold and iron form a compensation energy level in the silicon, and the monocrystal silicon thermistor with high B value and negative temperature coefficient is prepared by chemically plating a nickel electrode, scribing and packaging. The obtained thermistor is subjected to electrical property test, and the electrical parameters of the thermistor are as follows: R 25 DEG C = 84 kilohm - 129 kilohm, and B 25 DEG C / 50 DEG C = 6240K - 6680K.

Description

technical field

[0001] The invention relates to the preparation of a gold and iron doped single crystal silicon negative temperature coefficient thermistor, which belongs to the field of semiconductor sensors. Background technique

[0002] Sensitive components and sensors are one of the three pillars of the electronic information industry determined by the state, and are considered to be the most promising electronic technology products. Thermistors are widely used in household appliances, industrial production equipment, and weather forecasting due to their high sensitivity, high reliability, and low price.

[0003] At present, the sensitive materials commonly used in thermistors are mainly oxide thermosensitive ceramics. According to the inherent laws of polycrystalline oxide semiconductors, the material constant B value is closely related to its resistivity, showing a positive correlation characteristic. Therefore, the application of oxide It is difficult to achieve high...