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Semiconductor device

A semiconductor and conduction technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc., can solve problems such as current collapse and on-resistance rise

Inactive Publication Date: 2014-03-26
KK TOSHIBA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In general, in a semiconductor device using gallium nitride (GaN), a current collapse phenomenon in which the current decreases when a high electric field is applied occurs, and as a result, the on-resistance increases

Method used

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  • Semiconductor device
  • Semiconductor device
  • Semiconductor device

Examples

Experimental program
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Effect test

no. 1 approach ）

[0029] figure 1 It is a cross-sectional view schematically illustrating the configuration of the semiconductor device according to the first embodiment.

[0030] Such as figure 1 As shown, the semiconductor device 110 according to the first embodiment includes a support substrate 10 , a first semiconductor region 20 , a second semiconductor region 30 , a first electrode 51 , a control electrode 53 , and a conductive portion 60 . The semiconductor device 110 further includes a second electrode 52 . The semiconductor device 110 is, for example, a GaN-based field effect transistor.

[0031] The support substrate 10 includes a conductive region 11 . The conductive region 11 may be provided on a part of the support substrate 10 or may be provided on the entire support substrate 10 . As the supporting substrate 10, for example, a semiconductor substrate (for example, n ＋ type silicon substrate, p ＋ type silicon substrate, n-type silicon carbide substrate) or silicon on insulat...

no. 2 approach ）

[0047] figure 2 It is a cross-sectional view schematically illustrating the configuration of the semiconductor device according to the second embodiment.

[0048] Such as figure 2 As shown, the semiconductor device 120 according to the second embodiment includes, in addition to the configuration of the semiconductor device 110 according to the first embodiment, bump electrodes (bump electrodes) B1 and B2 respectively provided on the wiring portions 71 , 72 and 73 . and B3. In addition, in figure 2 in, will figure 1 The configuration of the illustrated semiconductor device 110 is shown upside down.

[0049] The bump electrode B1 is provided on the wiring portion 71 conducting to the first electrode 51, the bump electrode B2 is connected to the wiring portion 72 conducting on the second electrode 52, and is connected to the wiring portion 73 conducting on the control electrode 53. There is a bump electrode B3.

[0050] Bump electrodes B1 , B2 , and B3 are connected to w...

no. 3 approach ）

[0066] Figure 6A and B are diagrams illustrating the configuration of the semiconductor device according to the third embodiment.

[0067] Figure 6A is a schematic cross-sectional view of a semiconductor device 130 according to the third embodiment, Figure 6B It is an equivalent circuit diagram of the semiconductor device 130 according to the third embodiment.

[0068] Such as Figure 6A As shown, the semiconductor device 130 has a structure in which a plurality of field effect transistors Tr1 and Tr2 are formed on an SOI (Silicon On Insulator) substrate 100 .

[0069] The SOI substrate 100 includes a supporting substrate 10 such as a silicon substrate, silicon oxide (SiO 2 ) and the like, and the conductive region 11 disposed on the insulating layer 12 . The conductive region 11 is, for example, a semiconductor layer with a relatively high impurity concentration (for example, n ＋ shaped silicon layer).

[0070] The semiconductor device 130 is provided with: includin...

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Abstract

According to one embodiment, a semiconductor device includes a substrate, a first semiconductor region, a second semiconductor region, a first electrode, a first electrode and a conducting section. The substrate includes a conductive region and has a first surface. The first semiconductor region is provided on the first surface side of the substrate and includes AlXGa1-XN (0<=X<=1). The second semiconductor region is provided on a side opposite to the substrate of the first semiconductor region and includes AlYGa1-YN (0<=Y<=1, X<=Y). The first electrode is provided on a side opposite to the first semiconductor region of the second semiconductor region and ohmically connects to the second semiconductor region. The conducting section electrically connects between the first electrode and the conductive region.

Description

[0001] Associate application [0002] This application claims priority based on Japanese Patent Application No. 2012-206041 (filing date: September 19, 2012). This application incorporates the entire content of the basic application by referring to this basic application. technical field [0003] Embodiments described later relate to semiconductor devices. Background technique [0004] A semiconductor device using a nitride semiconductor can improve the trade-off relationship between breakdown voltage and on-resistance, and can achieve lower on-resistance and higher breakdown voltage than devices using silicon (Si). In general, in a semiconductor device using gallium nitride (GaN), a current collapse phenomenon in which current decreases when a high electric field is applied occurs, and as a result, on-resistance increases. In order to avoid this phenomenon, it is necessary to disperse the electric field inside the element. For example, the electric field inside the eleme...

Claims

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Application Information

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IPC IPC(8): H01L29/78H01L29/40
CPCH01L29/2003H01L29/0657H01L29/4175H01L2224/16225H01L29/7786H01L21/743H01L23/3178H01L24/05H01L24/06H01L24/13H01L24/14H01L2224/02371H01L2224/02372H01L2224/0401H01L2224/05548H01L2224/05553H01L2224/05568H01L2224/0603H01L2224/13023H01L2224/13024H01L2224/1403H01L2224/1411H01L2224/14155H01L2224/94H01L2924/00014H01L2924/12032H01L2924/12042H01L2924/00H01L2224/03H01L2224/13099
Inventor 齐藤泰伸藤本英俊大野哲也吉冈启斋藤涉仲敏行
Owner KK TOSHIBA
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