A kind of method for preparing cigs solar cell
A technology of solar cells and molybdenum electrodes, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of inhomogeneous absorption layer and buffer layer, affecting battery quality, etc., and achieve good product quality, improve product quality, and save space. Effect
Active Publication Date: 2017-01-25
GUANGXI HUAXI GRP CO LTD
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Problems solved by technology
Because this method uses horizontal sputtering, due to the effect of gravity, the absorption layer and buffer layer deposited on the substrate are not uniform enough, which affects the quality of the battery.
Method used
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Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0025] Describe the present invention in detail below:
[0026] The method of the present invention comprises: sputtering a molybdenum electrode layer on the substrate; the substrate adopts alkaline soda-lime glass, and this glass contains metal sodium ions, which can enter the absorbing layer of the battery through diffusion and contribute to the growth of film crystal grains; The surface of the molybdenum electrode layer is scale-shaped to increase the contact area between the upper and lower layers, thereby increasing the adhesion, and the thickness of the molybdenum electrode layer should be controlled at 0.5--1.5 μm.
[0027] Place the substrate with the molybdenum electrode layer in the vacuum chamber, and push the substrate forward to sputter the CIGS absorption layer on the substrate; push the substrate backward to sputter the CdS buffer layer on the absorption layer; when preparing the absorption layer target, First CuCl 2 , InCl 3 , GaCl 3 、Na 2 Se is added to et...
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Abstract
The invention relates to a CIGS solar cell, in particular to a method for manufacturing the CIGS solar cell. The method for manufacturing the CIGS solar cell comprises the steps of sputtering a molybdenum electrode layer on a substrate, arranging the substrate provided with the molybdenum electrode layer in a vacuum chamber, forwards pushing the substrate, sputtering a CIGS absorbing layer on the substrate, reversely pushing the substrate, sputtering a CdS buffering layer on the absorbing layer, plating a ZnO conductive oxidation layer on the buffering layer, plating an AZO layer on the conductive oxidation layer and performing cutting and encapsulation. The absorbing layer is sputtered through forward movement of the substrate. The buffering layer is sputtered through reverse movement of the substrate, and the production efficiency is improved. In addition, a space is saved, and the production cost is reduced. By adopting the method for manufacturing the CIGS solar cell, sputtering of the CIGS absorbing layer is effectively controlled, the thickness of each layer is accurately controlled, and the quality of produced products is good.
Description
technical field [0001] The invention relates to a preparation method of a CIGS solar cell. Background technique [0002] In recent years, the photovoltaic industry has shown a trend of accelerated development. The characteristics of development are: increased output, improved conversion efficiency, reduced cost, and continuously expanded application fields. Compared with ten years ago, the price of solar cells has been greatly reduced. It can be expected that with the advancement of technology and the expansion of the market, the cost and selling price of photovoltaic cells will drop significantly. After 2010, due to the decline in the cost of solar cells, photovoltaic technology is expected to enter a period of large-scale development. With the advancement of technology, the development of thin-film solar cells will change with each passing day, and their market share in the future photovoltaic market will gradually increase. As the thin-film solar cell with the best per...
Claims
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IPC IPC(8): H01L31/18
CPCC23C14/025C23C14/08C23C14/34H01L31/0322Y02E10/541Y02P70/50
Inventor 陈进中莫经耀吴伯增林东东甘振英
Owner GUANGXI HUAXI GRP CO LTD