A kind of preparation method of transferable mercury cadmium telluride thin film

A mercury cadmium telluride and thin-film technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as failure to meet device requirements, high temperature resistance, difficulty in film growth, etc., and achieve the effect of convenient selection
CN103700731BInactive Publication Date: 2016-03-02SHANDONG NORMAL UNIV
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
SHANDONG NORMAL UNIV
Publication Date
2016-03-02
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention relates to a preparing method of a transferable Te-Cd-Hg film. The method comprises the steps of performing vapor deposition on a metal substrate to obtain a graphene layer, adhering the obtained structural material with a release film of which the surface is uniformly coated with a photolysis glue into a whole by proper heating and baking, then corroding the metal substrate off, rinsing the rest ''graphene+photolysis glue+release film structural material with deionized water, drying and adhering the structural material with a hard transparent high-temperature resistant substrate into a whole with a hydrolysis glue to form a ''transition substrate+hydrolysis glue layer+graphene+photolysis glue layer+release film'' structure material; releasing the photolysis glue and removing the release film to obtain the ''transition substrate+hydrolysis glue layer+graphene'' structural material, depositing a Te-Cd-Hg film with a laser molecular beam epitaxy method, releasing the hydrolysis glue, removing the transition substrate, and moving the ''graphene+Te-Cd-Hg'' structural material onto a target substrate material. The crystalline state Te-Cd-Hg film can be obtained on amorphous state inorganic substrate and organic substrate materials.
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Description

technical field

[0001] The invention relates to a preparation method of a transferable mercury cadmium telluride thin film, belonging to the technical field of infrared thin film materials. Background technique

[0002] Mercury cadmium telluride material is a pseudo-binary compound semiconductor alloy material with direct band gap, due to its low intrinsic carrier concentration, high electron mobility, large electron-to-hole mobility ratio, large light absorption coefficient, and low thermal excitation rate , small electronic effective mass, thermal expansion coefficient close to that of silicon, etc., has been the most widely used main material in infrared detectors at present, and has an extremely important application background in the fields of military technology and space technology.

[0003] However, due to its unique physical characteristics, it has been difficult to find an excellent preparation technology for the preparation of HgCdTe single crystal materials. The...

Claims

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