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Alignment structure and alignment method of double-sided lithography machine

A lithography machine and double-sided technology, which is applied in micro-lithography exposure equipment, photoplate making process of pattern surface, optics, etc., can solve problems such as low alignment accuracy, affecting alignment system accuracy, and large alignment deviation , to improve production efficiency, provide alignment accuracy, and reduce errors

Active Publication Date: 2015-11-25
CSMC TECH FAB2 CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in these alignment methods, there are certain defects
Among them, the shortcomings of infrared alignment are: poor observation conditions of infrared microscope, low alignment accuracy, slow alignment speed, low productivity, when the wafer reaches a certain thickness, the infrared penetration ability is reduced, alignment is very difficult, and cannot It is used for wafer exposure that is not transparent to infrared light; the disadvantages of the four-objective lens alignment principle are: complex optical system, difficult design, assembly, and debugging, bulky and high equipment cost, inconvenient operation, and low productivity; double mask alignment The main disadvantages of the principle are: the equipment parts require high precision and complexity, and the exposure resolution is easily reduced due to mask deformation; the grating phase alignment is a very complicated system, which not only involves light, mechanics, electricity, materials, and processes and computer and other multidisciplinary theories, and the performance of any of the other subsystems of the lithography machine may affect the accuracy of the alignment system. In addition, since the grating alignment requires automatic scanning of precision workpiece tables, making This type of alignment has limited application in proximity contact optics
The MEMS double-sided lithography machine EVG620 completely manually places wafers and aligns them. The alignment accuracy of the machine is only 2 μm, which is relatively high; the machine error plus manual alignment (use the existing "+" word mark) , the alignment deviation of the manufactured product is relatively large, and the product cannot be satisfied in many cases, and rework is often required

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Embodiment Construction

[0023] The invention discloses an alignment structure of a double-sided lithography machine. The alignment structure includes a "+"-shaped main alignment mark and several auxiliary alignment marks symmetrically arranged on the upper, lower, left, and right sides of the main alignment mark. The "+" The main alignment mark of the font is formed by the vertical intersection of the main horizontal alignment mark and the vertical main alignment mark. The auxiliary alignment marks are stepped. Each auxiliary alignment mark is composed of several rectangles with the same width and an arithmetic sequence of lengths. .

[0024] The invention also discloses a double-sided lithography machine alignment method, the method comprising:

[0025] S1. Obtain the left and right alignment structures on the static mask plate through the CCD imaging system, and collect image data through the image acquisition system, and process, locate and display the alignment structures through the computer, wh...

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Abstract

Disclosed are a position matching structure and a position matching method for a two-sided stepper. The position matching structure comprises a primary "+" shaped position matching mark (10), and some secondary position matching marks (20) disposed above and under the primary position matching mark and in the left and right positions of the primary position matching mark. The "+" shaped primary position matching mark (10) is formed by a horizontal primary position matching mark (11) and a vertical primary position matching mark (12) vertically crossed. The secondary position matching mark (20) is stepped, and an each secondary position matching mark is formed by some rectangles with equal widths and some rectangles with lengths forming arithmetic progression. Position matching is performed by using a "+" shaped primary position matching mark and secondary position matching marks disposed above and under the primary position matching mark and in the left and right positions of the primary position matching mark, the present invention helps a naked eye distinguish matching positions and the positions matching precision is provided, thereby reducing an error due to the manual position matching and improving the production efficiency.

Description

technical field [0001] The invention relates to the technical field of semiconductor photolithography, in particular to an alignment mark structure and alignment method of a double-sided photolithography machine. Background technique [0002] There are many alignment methods that can be selected in double-sided lithography machines, such as infrared alignment, four-objective alignment, double-mask alignment, and grating phase alignment. However, there are certain defects in these alignment methods. Among them, the shortcomings of infrared alignment are: poor observation conditions of infrared microscope, low alignment accuracy, slow alignment speed, low productivity, when the wafer reaches a certain thickness, the infrared penetration ability is reduced, alignment is very difficult, and cannot It is used for wafer exposure that is not transparent to infrared light; the disadvantages of the four-objective lens alignment principle are: complex optical system, difficult design...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F9/00G03F7/20
CPCG03F9/7084G03F9/7076
Inventor 徐春云
Owner CSMC TECH FAB2 CO LTD