A Prediction Method of Device On-orbit Single Event Turnover Rate Based on Composite Sensitive Volume Model

Abstract

The invention provides a device in-orbit single event upset rate predicating method based on a composite sensitive volume model. The method includes: acquiring charge deposition borne by a device on an actual flight orbit by means of event transportation simulation; combining a single event effect simulation means of a device logic unit to acquire sensitive parameters of the device logic unit, establish the composite sensitive volume model, and describe incident event decomposition charge collection situation; after sample event upset of the logic unit is obtained, adopting a weighted statistic method to obtain a device in-orbit upset rate prediction result. Accuracy in in-orbit upset rate prediction of space navigation components and particularly of high-integration-level small-feature-size deep submicron devices is improved.

Description

technical field [0001] The invention relates to a method for predicting the on-orbit single event turnover rate of a device based on a composite sensitive volume model, and belongs to the field of anti-radiation technology of aerospace components. Background technique [0002] The interaction between a single high-energy particle existing in the operating space of a spacecraft and the onboard electronic components may cause the single event effect of the components, which is one of the important factors that induce spacecraft failure. Ground-based particle accelerators cannot produce the same charged-particle radiation environment as orbiting spacecraft. The on-orbit turnover rate prediction method, combined with the ground simulation radiation test data of components and the actual on-orbit radiation environment, realizes the prediction of the actual on-orbit single event turnover of the device, which provides a basis for the evaluation and evaluation of the anti-single eve...

AI Technical Summary

Problems solved by technology

[0006] (1) The simplified assumptions of the existing prediction method on the existence of a single sensitive volume (the size of the sensitive volume is determined by the experimental data corresponding to the high-LET particles in the ground simulation irradiation test) and that all the deposited charges are collected lead to the low-LET particles’ contribution to the flipping overestimate

The LET energy spectrum of spatially charged particles has a higher flux in the low LET range, which causes larger prediction errors for deep submicron devices with smaller LET switching thresholds

[0007] (2) Existing prediction methods only use LET to characterize the ionization of incident particles, without considering the spatial distribution of ion track carriers

For highly integrated devices with small feature sizes, ignoring the impact of the spatial distribution of carriers generated after particle incidence on flipping will cause greater prediction errors

[0008] (3) The analysis object of the existing prediction method is a logic unit. For highly integrated devices, the sensitive volume exceeds the unit range and the sensitive volume of adjacent units overlaps, ignoring the simultaneous occurrence of adjacent units due to charge sharing of multiple circuit nodes. flipped case

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