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Full monocrystalline silicon ingot furnace

A single crystal silicon and ingot furnace technology, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the problem that the direction of single crystal growth cannot be controlled, the temperature of the side thermal field cannot keep up, and it is not conducive to quasi-single crystal. growth and other problems, to achieve the effect of convenient and safe transfer operation, reasonable structure, and shortened process cycle

Active Publication Date: 2016-02-24
安徽省徽商金属股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The single crystal silicon ingot furnaces currently used at home or abroad have the following disadvantages: 1. The five-sided heating of the GT ingot furnace in the United States uses upper heaters and four side heaters, and there is no lower heater. During the ingot process, the melting time of silicon material is long, and the temperature gradient of the transverse thermal field of the entire thermal field is large, resulting in excessive melting of side seed crystals, which is not conducive to the growth of quasi-single crystals
2. The German ALD ingot furnace adopts upper and lower heaters, without four side heaters. During the quasi-single crystal ingot casting process, the temperature of the side thermal field cannot keep up, which is not conducive to the growth of quasi-single crystals
3. Some structures have no water cooling plate, so the direction of single crystal growth cannot be controlled, and a large number of polycrystals will be produced, so the single crystal rate of silicon ingots is low
4. In some structures, the water cooling plate is inside the heat insulation cage, which has two disadvantages: A: It is impossible to cut off the water in the water cooling plate after the furnace is turned on, so that the temperature of the lower part of the crucible will be low, and the silicon material in the upper part of the seed crystal may not melt. However, if polycrystalline is produced, even if it is melted, the energy consumption will be too high; B: The water cooling plate is inside the heat insulation cage, that is, in the high temperature zone, and has been exposed to high temperature radiation. Once the water is cut off or leaks, unimaginable consequences will occur

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Embodiment Construction

[0013] Below in conjunction with embodiment and accompanying drawing thereof, the present invention is described in further detail:

[0014] Such as figure 1 As shown, a full monocrystalline silicon ingot casting furnace includes a furnace body 1, a heat insulation cage 11, an upper heating element 2, a lower heating element 9, a side heating element 6, an upper crucible cover plate 3, a side crucible guard plate 4, Quartz crucible 5, upper heat exchange platform 7, lower heat exchange platform 8, lifting column 10, water cooling plate 12.

[0015] The heat insulation cage 11 is box-shaped and fixed in the furnace body 1 .

[0016] The upper heating body 2 is fixed on the inside of the heat insulation cage 11, the side heating body 6 is fixed around the inside of the heat insulation cage 11, and a heat exchange platform is arranged in the middle of the heat insulation cage 11, and the heat exchange platform is a two-layer structure , the lower heat exchange platform 8 is fix...

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Abstract

The invention relates to a full monocrystalline silicon ingot casting furnace which comprises a furnace body, a heat isolation cage, an upper heating body, a lower heating body, a side heating body, an upper crucible cover plate, a side crucible protecting plate, a quartz crucible, an upper heat exchanging table, a lower heat exchanging table, a lifting vertical column and a water cooling tray, wherein the heat isolation cage takes the shape of a box, and is fixed in the furnace body, and the upper heating body and the side heating body are fixedly arranged at the inner part of the heat isolation cage; the lower heat exchanging table is arranged at the middle part of the heat isolation cage, and is fixedly connected with the lower heating body and the lifting vertical column, the upper heat exchanging table is movable, and the quartz crucible, the side crucible protecting plate 4, and the upper crucible cover plate are arranged on the upper heat exchanging table; the water cooling tray is arranged on the outer side of the bottom of the heat isolation cage. The furnace has the advantages that the structure is reasonable, the defects in the prior art are overcome, the transverse gradient of the whole heat field is small, the silicone melting time is short, the monocrystalline rate is improved, the process period is shortened, the production efficiency of equipment is improved, the energy consumption is saved, and the production cost of ingot casting is reduced.

Description

technical field [0001] The invention belongs to the technical field of solar cell silicon ingot production equipment, and in particular relates to an all-monocrystalline silicon ingot casting furnace. Background technique [0002] Single crystal silicon is drawn in a thermal field, and the quality of the thermal field has a great influence on the quality of single crystal silicon. During the growth process of monocrystalline silicon, a good thermal field can produce high-quality monocrystalline. A bad thermal field can easily turn a single crystal into a polycrystalline one, or even fail to induce a single crystal at all. Although some thermal fields can grow single crystals, the quality is poor, with dislocations and other structural defects. Therefore, it is a very important technology to find better thermal field conditions and configure the optimal thermal field. [0003] The single crystal silicon ingot furnaces currently used at home or abroad have the following dis...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B11/00C30B29/06
Inventor 水川许柏
Owner 安徽省徽商金属股份有限公司
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