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A kind of ingot casting method of granular polycrystalline silicon

A polysilicon and granular technology, applied in the growth of polycrystalline materials, chemical instruments and methods, crystal growth, etc., to achieve the effects of convenient implementation, simple processing steps, and low input costs

Inactive Publication Date: 2016-01-20
XIAN HUAJING ELECTRONICS TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, there is a lack of a granular polysilicon ingot casting method with simple steps, convenient implementation and good use effect, which can use low-cost granular polysilicon to make ingot products with high conversion efficiency, so as to reduce waste and cost the goal of

Method used

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  • A kind of ingot casting method of granular polycrystalline silicon
  • A kind of ingot casting method of granular polycrystalline silicon
  • A kind of ingot casting method of granular polycrystalline silicon

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0058] like figure 1 The ingot casting method of a kind of granular polysilicon shown, comprises the following steps:

[0059] Step 1, charging: the granular polysilicon 1 is loaded into the crucible as the silicon material for ingot casting.

[0060] like image 3 As shown, after the charging in step 1 is completed, the charging structure in the crucible includes the granular polysilicon 1 filled in the crucible, the pad between the inner wall of the crucible and the granular polysilicon 1 A layer of edge protection 2 formed by assembling block polysilicon and a cover top 3 formed by assembling block polysilicon on the granular polysilicon 1, the cover top 3 is located in the edge protection 2; after the charging is completed , the silicon material in the crucible includes granular polysilicon 1 , edge guard 2 and roof 3 .

[0061] In this embodiment, the crucible is placed flat on the horizontal base plate 6, and the outer guard plate 7 for limiting the quartz crucible 1 ...

Embodiment 2

[0133] In this embodiment, the difference from Example 1 is that: before charging in step 1, a layer of 20mm thick silicon chips is laid on the bottom of the crucible to form a pavement layer 4 of silicon chips; In the tenth step, keep the 5mm thick broken silicon chips in the broken silicon chip pavement layer 4 without melting; in the second step, the preheating time is 6h and T1=1185°C, P1=80kW; in the third step, T5=1560°C, t=18min, Q1=650mbar; in the first step, the holding time is 0.4h; in the second to fifth steps, T2=1210℃, and the heating time is 0.4h; in the sixth step, T3=1460℃, and the heating time is 260min ; In the seventh step, T4=1510°C and the heating time is 260min; in the eighth step, T5=1560°C and the heating time is 260min; in the ninth step, the holding time is 3.5h; in the tenth step, the holding time is 4h.

[0134] In the present embodiment, when heating up and pressurizing in the 2nd step to the 5th step, the process is as follows:

[0135] The seco...

Embodiment 3

[0145] In this embodiment, the difference from Example 1 is that before charging in step 1, a layer of 25mm thick silicon fragments is laid on the bottom of the crucible to form a pavement layer 4 of silicon fragments; In the 10th step, keep the 20mm thick silicon fragments in the pavement layer 4 of the fragmented silicon fragments without melting; in the second step, the preheating time is 10h and T1=1165°C, P1=70kW; in the third step, T5=1540°C, t=22min, Q1=550mbar; the holding time in step 1 is 0.6h; from step 2 to step 5, T2=1190℃, heating time is 0.6h; in step 6, T3=1440℃ and heating time is 280min ; In the seventh step, T4=1490°C and the heating time is 280min; in the eighth step, T5=1540°C and the heating time is 280min; in the ninth step, the holding time is 4.5h; in the tenth step, the holding time is 8h.

[0146] In the present embodiment, when heating up and pressurizing in the 2nd step to the 5th step, the process is as follows:

[0147] The second step, the fir...

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Abstract

The invention discloses an ingot casting method of granular polysilicon. The method comprises the following steps: firstly, charging: putting the granular polysilicon into a crucible as silicon ingot casting materials; secondly, preheating; thirdly, melting, wherein the melting process comprises the following steps: step 1, carrying out heat preservation; steps 2 to 5, heating and implementing pressurization; step 6, raising temperature for the first time and keeping pressure, namely raising the temperature to T3 which is equal to 1450 DEG C; step 7, raising the temperature for the second time and keeping the pressure, namely raising the temperature to T4 which is equal to 1500 DEG C; step 8, raising the temperature for the third time and keeping the pressure, namely raising the temperature to T5 which is equal to 1550 DEG C, wherein temperature rise times from the step 6 to step 8 are all 260 to 300 minutes; step 9, carrying out heat preservation; step 10, continuously carrying out the heat preservation; fourthly, growing crystals; fifthly, annealing and cooling. The method disclosed by the invention is simple in steps, reasonable in design, convenient in realization, easily mastered, and good in use effect. Furthermore, ingot casting products with high conversion efficiency can be manufactured by using the low- cost granular polysilicon, thereby achieving the purposes of reducing wastes and lowering cost.

Description

technical field [0001] The invention belongs to the technical field of polycrystalline silicon ingot casting, and in particular relates to an ingot casting method of granular polycrystalline silicon. Background technique [0002] With the advancement of technology and the development of industrialization, photovoltaic power generation has gradually expanded its market share as an ideal alternative energy source. Moreover, photovoltaic power generation is one of the most important clean energy sources and has great potential for development. The key factors restricting the development of the photovoltaic industry are low photoelectric conversion efficiency on the one hand and high cost on the other hand. The cost of crystalline silicon materials accounts for about 30% of the overall cost of photovoltaic cells. How to further reduce costs, reduce waste and improve quality It has always been an urgent requirement of the market. [0003] At present, the most important methods ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B28/06C30B29/06
Inventor 周建华
Owner XIAN HUAJING ELECTRONICS TECH