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A kind of ingot casting method for silicon powder purification

A technology for casting ingots and silicon powder is applied in the field of ingots for purification of silicon powder to improve the quality of crystal growth, ensure conversion efficiency, and achieve the effect of convenience.

Inactive Publication Date: 2016-04-13
XIAN HUAJING ELECTRONICS TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, there is a lack of an ingot casting method for silicon powder purification with simple steps, convenient implementation and good use effect, which can use low-cost silicon powder to make ingot products with high conversion efficiency, so as to reduce waste and reduce costs

Method used

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  • A kind of ingot casting method for silicon powder purification
  • A kind of ingot casting method for silicon powder purification
  • A kind of ingot casting method for silicon powder purification

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0058] Such as figure 1 Shown a kind of silicon powder purification uses the ingot casting method, comprises the following steps:

[0059] Step 1, charging: put the silicon cake 1 formed by pressing silicon powder into the crucible as the silicon material for ingot casting.

[0060] In this embodiment, the silicon powder is pressed into a silicon cake 1, and the pressure of the cake press machine used is 300 tons, so that the loose silicon powder is pressed into a silicon cake with a certain density, and a package of 5KG is convenient for lifting and loading. quantity.

[0061] Such as image 3 As shown, after the charging in step 1 is completed, the charging structure in the crucible includes a silicon cake 1 filled in the crucible, and a layer between the inner wall of the crucible and the silicon cake 1. The edge protection 2 formed by assembling block polysilicon and the cover top 3 formed by assembling block polysilicon on the silicon cake 1 are covered, and the cover ...

Embodiment 2

[0134] In this embodiment, the difference from Example 1 is that: before charging in step 1, a layer of 20mm thick silicon chips is laid on the bottom of the crucible to form a pavement layer 4 of silicon chips; In the tenth step, keep the 5mm thick broken silicon chips in the broken silicon chip pavement layer 4 without melting; in the second step, the preheating time is 6h and T1=1185°C, P1=80kW; in the third step, T5=1560°C, t=18min, Q1=650mbar; in the first step, the holding time is 0.4h; in the second to fifth steps, T2=1210℃, and the heating time is 0.4h; in the sixth step, T3=1460℃, and the heating time is 5h ; In the seventh step, T4=1510°C and the heating time is 5h; in the eighth step, T5=1560°C and the heating time is 5h; in the ninth step, the holding time is 3.5h; in the tenth step, the holding time is 4h.

[0135] In the present embodiment, when heating up and pressurizing in the 2nd step to the 5th step, the process is as follows:

[0136] The second step, the...

Embodiment 3

[0146] In this embodiment, the difference from Example 1 is that before charging in step 1, a layer of 25mm thick silicon fragments is laid on the bottom of the crucible to form a pavement layer 4 of silicon fragments; In the tenth step, keep the 20mm thick broken silicon chips in the broken silicon chip pavement layer 4 without melting; in the second step, the preheating time is 10h and T1=1165°C, P1=70kW; in the third step, T5=1540°C, t=22min, Q1=550mbar; in the first step, the holding time is 0.6h; in the second to fifth steps, T2=1190℃, and the heating time is 0.6h; in the sixth step, T3=1440℃, and the heating time is 7h ; In the seventh step, T4=1490°C and the heating time is 7h; in the eighth step, T5=1540°C and the heating time is 7h; in the ninth step, the holding time is 4.5h; in the tenth step, the holding time is 8h.

[0147] In the present embodiment, when heating up and pressurizing in the 2nd step to the 5th step, the process is as follows:

[0148] The second ...

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Abstract

The invention discloses an ingot casting method for purification of silicon powder. The method comprises the following steps: 1, loading: putting silicon cakes formed by pressing silicon powder into a crucible as an ingot casting silicon material; 2, preheating; 3, melting: the process is as follows: step 1, heat preservation; step 2 to step 5, temperature rise and pressurization; step 6, the first time of temperature rise and pressure maintaining: the temperature is raised to T3 and the temperature rise time is 3-8 h, and T3 is 1450 DEG C; step 7, the second time of temperature rise and pressure maintaining: the temperature is raised to T4 and the temperature rise time is 3-8 h, and T4 is 1500 DEG C; step 8, the third time of temperature rise and pressure maintaining: the temperature is raised to T5 and the temperature rise time is 3-8 h, and T5 is 1550 DEG C; step 9, heat preservation; step 10, continuing to preserve heat; 4, growing crystal; 5, annealing and cooling. The method has the advantages of simple steps, reasonable design, easy grasp and good using effect, can use low-cost silicon powder to manufacture ingot casting products with high conversion efficiency, and achieves the purpose of reducing waste and reducing cost.

Description

technical field [0001] The invention belongs to the technical field of polysilicon ingot casting, and in particular relates to an ingot casting method for purifying silicon powder. Background technique [0002] With the advancement of technology and the development of industrialization, photovoltaic power generation has gradually expanded its market share as an ideal alternative energy source. Moreover, photovoltaic power generation is one of the most important clean energy sources and has great potential for development. The key factors restricting the development of the photovoltaic industry are low photoelectric conversion efficiency on the one hand and high cost on the other hand. The cost of crystalline silicon materials accounts for about 30% of the overall cost of photovoltaic cells. How to further reduce costs, reduce waste and improve quality It has always been an urgent requirement of the market. [0003] Silicon powder is an additional product in the production ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B28/06C30B29/06
Inventor 周建华
Owner XIAN HUAJING ELECTRONICS TECH