Field limiting ring-negative bevel angle compound terminal structure

Abstract

The invention discloses a field limiting ring-negative bevel angle compound terminal structure. The central region of a chip is used as an active region, the peripheral region of the active region is used as a terminal region, an n-type FS layer is arranged below a common n<->substrate of the active region and the terminal region, and a p<+> anode region and an anode are arranged below the n-type FS layer. In the active region, a plurality of parallel units are arranged in a n<-> base region, each unit is internally provided with a wavy p base region adjacent to the n<-> base region, a p<+> base region is arranged above the p base region, a cathode n<+> emission region is arranged in the center of the p<+> base region, and a cathode is arranged above each n<+> emission region. A gate is arranged above the p<+> base region, and the whole gate surrounds the periphery of the encircled cathode n<+> emission region. In the n<-> substrate of the terminal region, at least one p-type filed limiting ring is arranged on the outer side of a main node, a negative bevel angle is arranged above the field limiting angle, and the slope is coated with a passivation layer. The field limiting ring-negative bevel angle compound terminal structure of the invention has better high-temperature stability.

Description

technical field [0001] The invention belongs to the technical field of power semiconductor devices, and relates to a field limiting ring-negative bevel composite terminal structure. Background technique [0002] In the development process of power semiconductor devices, the setting of the terminal structure will directly affect the withstand voltage and stability of the power semiconductor devices. Gate-commutated thyristor (GCT) is a new type of high-power semiconductor device developed based on gate turn-off thyristor (GTO). In order to improve the terminal breakdown voltage of GCT, a mesa terminal structure or lateral variable doping (VLD) structure. The mesa terminal structure is formed by mechanical grinding and corrosion process. The manufacturing process is relatively mature, but the terminal breakdown voltage it can achieve is only 80% of its internal breakdown voltage, and its high temperature leakage current and terminal occupy a large chip area. . The lateral v...

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Problems solved by technology

[0004] The purpose of the present invention is to provide a field-limiting ring-negative bevel composite terminal structure, which solves the problems of low junction terminal voltage, poor high temperature stability and large chip area occupied by the terminal in the existing high-voltage deep junction devices.

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