Field limiting ring-negative bevel angle compound terminal structure

A compound terminal and field-limiting ring technology, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of low voltage, poor high temperature stability, large chip area, etc., and achieve the effect of improved breakdown voltage and good high temperature stability

Active Publication Date: 2014-04-23
XIAN UNIV OF TECH
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  • Abstract
  • Description
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Problems solved by technology

[0004] The purpose of the present invention is to provide a field-limiting ring-negative bevel composite terminal structure, which solves the problems of lo

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  • Field limiting ring-negative bevel angle compound terminal structure
  • Field limiting ring-negative bevel angle compound terminal structure
  • Field limiting ring-negative bevel angle compound terminal structure

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[0018] The present invention will be described in detail below with reference to the drawings and specific embodiments.

[0019] Reference figure 1 , The field limiting loop-negative oblique angle composite terminal structure of the present invention is used for the preparation of GCT devices in the wavy base region, and the specific structure settings are:

[0020] The central area of ​​the chip is used as the active area, and the peripheral area of ​​the active area is used as the terminal area. An n-type FS layer is arranged under the n-substrate common to the active area and the terminal area, and a p-type FS layer is arranged under the n-type FS layer. + Anode area and its anode (ie bottom position);

[0021] In the active area, n - There are multiple units connected in parallel in the base area, and each unit is connected to n - The base area is adjacent to the wavy p base area, and the p base area is above the p + Base area, p + There is a cathode n in the center of the base ar...

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Abstract

The invention discloses a field limiting ring-negative bevel angle compound terminal structure. The central region of a chip is used as an active region, the peripheral region of the active region is used as a terminal region, an n-type FS layer is arranged below a common n<->substrate of the active region and the terminal region, and a p<+> anode region and an anode are arranged below the n-type FS layer. In the active region, a plurality of parallel units are arranged in a n<-> base region, each unit is internally provided with a wavy p base region adjacent to the n<-> base region, a p<+> base region is arranged above the p base region, a cathode n<+> emission region is arranged in the center of the p<+> base region, and a cathode is arranged above each n<+> emission region. A gate is arranged above the p<+> base region, and the whole gate surrounds the periphery of the encircled cathode n<+> emission region. In the n<-> substrate of the terminal region, at least one p-type filed limiting ring is arranged on the outer side of a main node, a negative bevel angle is arranged above the field limiting angle, and the slope is coated with a passivation layer. The field limiting ring-negative bevel angle compound terminal structure of the invention has better high-temperature stability.

Description

technical field [0001] The invention belongs to the technical field of power semiconductor devices, and relates to a field limiting ring-negative bevel composite terminal structure. Background technique [0002] In the development process of power semiconductor devices, the setting of the terminal structure will directly affect the withstand voltage and stability of the power semiconductor devices. Gate-commutated thyristor (GCT) is a new type of high-power semiconductor device developed based on gate turn-off thyristor (GTO). In order to improve the terminal breakdown voltage of GCT, a mesa terminal structure or lateral variable doping (VLD) structure. The mesa terminal structure is formed by mechanical grinding and corrosion process. The manufacturing process is relatively mature, but the terminal breakdown voltage it can achieve is only 80% of its internal breakdown voltage, and its high temperature leakage current and terminal occupy a large chip area. . The lateral v...

Claims

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Application Information

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IPC IPC(8): H01L29/06H01L29/40
CPCH01L29/0615H01L29/0619
Inventor 王彩琳王一宇
Owner XIAN UNIV OF TECH
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