A light-emitting diode and optical coherence tomography system
A technology of optical coherence tomography and light-emitting diodes, which is applied in the direction of material analysis, material analysis, and scientific instruments through optical means. The effect of high industrial value and simple structure
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Embodiment 1
[0043] A new type of OCT system, system schematic diagram refer to figure 1, where the wide-spectrum light source used is a new type of InPBi light-emitting diode without a barrier layer prepared on an InP substrate by molecular beam epitaxy. The device structure is shown in figure 2 , including n-type substrate, n-type electrode layer, InPBi light-emitting layer and p-type electrode layer.
[0044] see figure 2 and 3 As shown, the light emitting diode device structure includes a substrate 10, a lower electrode layer 20 formed on the substrate 10, and an InPBi light emitting layer 30 formed on the lower electrode layer 20, wherein the InPBi light emitting layer 30 in the InPBi light emitting layer The atomic percentage content of Bi element in the material is 0.1-5%, and the upper electrode layer 40 is formed on the InPBi light-emitting layer 30 and the conductivity type of the lower electrode layer is opposite to that of the lower electrode layer.
[0045] The preferred ...
Embodiment 2
[0053] see Figure 4 The novel InPBi light-emitting diode device structure shown is different from Embodiment 1 in that: an n-type lower barrier layer 50 is formed between the n-type electrode layer 20 and the InPBi light-emitting layer 30; the InPBi light-emitting A p-type upper barrier layer 60 is formed between the layer 30 and the p-type electrode layer 40 . The preferred preparation steps are as follows:
[0054] (1) On the n-type InP substrate 10 grow a layer of Si-doped InP or InGaAs as the lower electrode layer 20 with a thickness of 200 nm and an electron concentration of 10 18 cm -2 order of magnitude, the growth temperature is 470°C;
[0055] (2) grow a 200nm Si-doped InAlAs lower barrier layer 50 with an electron concentration of 10 17 cm -2 order of magnitude, the growth temperature is 470°C;
[0056] (3) Close the shutters of In and Al, and reduce the growth temperature to 320°C under the premise that the As source is turned on;
[0057] (4) growing a 2 μm...
Embodiment 3
[0062] The device structure see Figure 5 and 6 As shown, the difference between it and the second embodiment lies in that the lower barrier layer 50 and the InPBi - Periodically arranged InPBi / barrier layer structures 70 are formed between the light emitting layers 30, preferably 4 periods, forming a quantum well structure. Its InPBi thickness is preferably 10 nm.
[0063] The preferred preparation steps are as follows:
[0064] (1) A layer of 100nm Si-doped InP is grown on the n-type InP substrate 10 as the lower electrode layer 20, so that the electron concentration is at 10 18 cm -2 order of magnitude, the growth temperature is 470°C;
[0065] (2) A layer of 200nm Si-doped InAlAs is grown on the InP electrode layer 20 as the lower barrier layer 50, so that the electron concentration is at 10 17 cm -2 order of magnitude, the growth temperature is 470°C;
[0066] (3) Close the shutters of Si, In, Al and As, and lower the growth temperature to 320°C under the premise ...
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