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Thermal expansion coefficient adaptation microwave and millimeter wave module integrated structure preparation method

A technology of thermal expansion coefficient and manufacturing method, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of MMIC chip cracking, hidden quality problems, module failure, etc., and achieve the effect of reducing contact potential difference

Active Publication Date: 2014-05-28
CHINA ELECTRONIS TECH INSTR CO LTD
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Problems solved by technology

[0004] In the existing scheme, due to the large difference in the thermal expansion coefficient between the aluminum alloy and the MMIC chip, there will be a large gap at the welding interface during the bonding or welding process of the MMIC chip, and during the subsequent use of the module. The existence of stress can easily cause cracking of the MMIC chip, resulting in failure of the module, which has a large quality risk

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  • Thermal expansion coefficient adaptation microwave and millimeter wave module integrated structure preparation method
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  • Thermal expansion coefficient adaptation microwave and millimeter wave module integrated structure preparation method

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Embodiment 1

[0032] In the design scheme of this patent, the method of adding a buffer sheet is adopted, and a transition layer is added between the MMIC chip and the aluminum alloy shielding cavity. The thermal expansion coefficient of the buffer sheet is between the MMIC chip and the aluminum alloy, but closer to the MMIC chip. In such a structure, the stress caused by the mismatch of thermal expansion coefficients is mainly concentrated at the interface between the aluminum alloy shielding cavity and the buffer sheet. Due to the good thermal expansion coefficient matching between the buffer sheet and the MMIC chip, almost There is no stress, which can greatly improve the reliability of the entire integrated structure.

[0033] The manufacturing process of the integrated structure is: the production of the shielding cavity, the processing of the integrated groove of the buffer sheet, the processing of the buffer sheet, the partial gold plating of the integrated groove of the buffer sheet,...

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Abstract

The invention provides a thermal expansion coefficient adaptation microwave and millimeter wave module integrated structure preparation method. A method of adding a buffer piece is used. A transition layer is added between an MMIC chip and an aluminum alloy shielding cavity. The thermal expansion coefficient of the buffer piece is between the thermal expansion coefficients of the MMIC chip and aluminum alloy, and is closer to the thermal expansion coefficient of the MMIC chip. By adopting the scheme, the problem of reduced reliability, which is caused by the phenomenon of 'gold crisp' when tin soldering interconnection is carried out on a copper wire between the MMIC chip and the shielding cavity and a gold plated film circuit substrate, is solved.

Description

technical field [0001] The invention belongs to the technical field of millimeter wave modules, and in particular relates to a method for manufacturing an integrated structure of a microwave and millimeter wave module with thermal expansion coefficient adaptation. Background technique [0002] At present, with the rapid development of communication technology, microwave and millimeter wave modules have higher requirements on the volume and weight of modules in some applications. [0003] In order to reduce the weight of the module, the shielding cavity of the module is usually made of a material with a lower density, such as an aluminum alloy material. In the current module integration method, all active and passive components are integrated in the aluminum alloy shielding cavity, and the components are secondarily integrated in the shielding cavity by gluing or welding. The schematic diagram of this integrated structure is shown in figure 1 shown, figure 1 In the embodime...

Claims

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Application Information

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IPC IPC(8): H01L21/48
CPCH01L23/24
Inventor 王斌路波李红伟宋志明
Owner CHINA ELECTRONIS TECH INSTR CO LTD
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