Solenoid Differential Inductor Based on TSV

Abstract

The invention discloses a solenoid type difference inductor based on a silicon through hole. The solenoid type difference inductor is composed of a horizontal metal line which is disposed in the top metal layer and the bottom metal layer of a silicon substrate, and the silicon through hole which vertically penetrates the silicon substrate. By use of a via-first silicon through hole technology, first of all, a metal through hole is etched in a silicon adaptor plate, then a horizontal interconnection line is constructed at the top and the back portion of the silicon adaptor plate, and electrical connection with the silicon through hole is carried out so that a coil is formed. A plurality of intersected lines exist in the metal line in the horizontal direction, and by use of the metal through hole and the two metal layers, a completely symmetrical structure is realized. By using the inductor provided by the invention, the dimension is reduced, and the overall inductance value can be improved at the same time.

Description

technical field [0001] The invention relates to an integrated circuit passive device, in particular to a spiral tube type differential inductor based on silicon through hole technology. Background technique [0002] Silicon-based integrated inductors are one of the important components of radio frequency integrated circuits, and play an important role in circuits such as amplifiers, mixers, and voltage-controlled oscillators. The commonly used silicon-based integrated inductor adopts a planar spiral structure. In the semiconductor process, the winding metal resistance of the spiral inductor is relatively large, and the loss of the silicon-based substrate is high, which makes it difficult to improve the quality factor of the spiral inductor. At the same time, the planar winding The structure occupies a large area, which affects the application of integrated inductors in actual circuits. [0003] The differential structure circuit is the most commonly used circuit design in a...

AI Technical Summary

Problems solved by technology

In these circuits, the original single-ended grounded inductance becomes an inductance connected to differential signals at both ends, such as figure 1 As shown, however, planar differential inductors still face problems such as occupied area and low Q value.

[0004] Researchers have adopted many methods to improve the performance of planar inductors. The most commonly used method is to design a modular ground protection (Patterned Ground Shield, PGS) structure to reduce the substrate loss of the inductor, but the effect of this optimization cannot be fully realized. Meet the performance requirements of monolithic RF integrated chips

In order to overcome the limitations of the two-dimensional planar structure, three-dimensional solenoid inductors have begun to attract people's attention, including the use of multilayer structures of metal layers to realize the solenoid inductors in the vertical direction, and the partial removal of silicon substrates. Empty, forming a suspended horizontal solenoid inductor, but the two are limited by the number of metal layers and mechanical reliability respectively

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