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Method and system for providing magnetic junctions having a thermally stable and easy to switch magnetic free layer

一种磁性结、自由的技术，应用在电磁设备的零部件、磁场控制的电阻器、电磁装置的制造/处理等方向，能够解决可靠性影响、热稳定性降低、影响热稳定性等问题

Active Publication Date: 2014-06-11
SAMSUNG ELECTRONICS CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

While traditional mechanisms exist to reduce switching currents, these mechanisms generally adversely affect thermal stability
The reduction of the thermal stability of the traditional MTJ10 has a negative impact on the reliability of the traditional MTJ10 for storing data for a long time
thus compromising the performance of conventional MTJ

Method used

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  • Method and system for providing magnetic junctions having a thermally stable and easy to switch magnetic free layer
  • Method and system for providing magnetic junctions having a thermally stable and easy to switch magnetic free layer
  • Method and system for providing magnetic junctions having a thermally stable and easy to switch magnetic free layer

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Embodiment Construction

[0030] Exemplary embodiments relate to a magnetic junction usable in a magnetic device such as a magnetic memory, and a device using the magnetic junction. The following description is presented to enable one of ordinary skill in the art to make and use the invention, and is provided in the context of the patent application and its requirements. Various modifications to the exemplary embodiments, general principles, and features described herein will be readily apparent. The exemplary embodiments are described primarily in terms of specific methods and systems provided in the detailed description. However, the methods and systems will also operate effectively in other implementations. Words such as "exemplary embodiment," "one embodiment," and "another embodiment" can refer to the same or different embodiments and to multiple embodiments. Embodiments will be described with respect to systems and / or devices having particular components. However, the system and / or device may ...

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Abstract

A method and system provide a magnetic junction usable in a magnetic device. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, and a free layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The free layer includes a plurality of subregions. Each of the subregions has a magnetic thermal stability constant. The subregions are ferromagnetically coupled such that the free layer has a total magnetic thermal stability constant. The magnetic thermal stability constant is such that the each of the subregions is magnetically thermally unstable at an operating temperature. The total magnetic thermal stability constant is such that the free layer is magnetically thermally stable at the operating temperature. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS [0002] This application claims priority to U.S. Patent Application No. 13 / 691,873, filed December 3, 2012, and U.S. Patent Application No. 14 / 026,386, filed September 13, 2013, which are incorporated herein by reference in their entirety for reference. technical field Background technique [0003] Magnetic memory, especially Magnetic Random Access Memory (MRAM), has attracted increasing attention due to its potential for high read / write speeds, excellent endurance, non-volatility, and low power consumption during operation. MRAM can store information using magnetic materials as an information recording medium. One type of MRAM is spin transfer torque magnetic random access memory (STT-MRAM). STT-MRAM utilizes a magnetic junction to be written at least in part by a current driven through the magnetic junction. A spin-polarized current driven through a magnetic junction imposes a spin moment on the magnetic moment in the magn...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/08G11C11/16H10N50/80H10N50/01H10N50/10
CPCH01L43/12H01L43/08H01L43/02G11C11/161G11C11/1675H10N50/10H10B61/00H10N50/01
Inventor 尤金·陈德米托·阿帕利科夫
Owner SAMSUNG ELECTRONICS CO LTD
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