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PECVD device, method and application thereof for preparing irregular surface film

An irregular, surface film technology, applied in metal material coating process, coating, gaseous chemical plating, etc., can solve the problems of increasing the manufacturing cost and operating cost of PECVD equipment

Active Publication Date: 2018-11-23
上海品吉技术有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The larger size of the reaction chamber greatly increases the manufacturing cost and operating cost of the PECVD device.

Method used

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  • PECVD device, method and application thereof for preparing irregular surface film
  • PECVD device, method and application thereof for preparing irregular surface film
  • PECVD device, method and application thereof for preparing irregular surface film

Examples

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Effect test

Embodiment 1

[0038] Embodiment 1: use the PECVD apparatus of the present invention to prepare silicon dioxide film

[0039] The PECVD device used in this embodiment is as figure 1 shown.

[0040] First, the surface of the cylindrical container (as a sample) with an open top is cleaned according to the following steps and the treatment of increasing the adhesion between the surface and the silicon dioxide film is carried out: the flow rate of 10sccm-300sccm is introduced into the container Ar or other inert gas plasma excited by component plasma; treat the surface of the container with Ar or other inert gas plasma at a pressure of 0.1-10 Torr and a temperature of 25-500°C for 1-100 seconds.

[0041] After the above treatment, stop feeding Ar or other inert gases, and introduce into the container the oxygen and silane (SiH) excited by the plasma excitation of the generating part. 4 ) or a silicon-containing compound (the raw material may be a gaseous or liquid silicon-containing compound),...

Embodiment 2

[0042] Embodiment 2: Using the PECVD device of the present invention to prepare a silicon nitride film

[0043] The PECVD device used in this embodiment is as image 3 shown.

[0044] First, clean the surface of the cylindrical container (as a sample) with an open top and increase the adhesion between the surface and the silicon dioxide film according to the following steps: introduce Ar or other inert gas into the container at a flow rate of 10sccm-300sccm ; Treat the surface of the container with plasma of Ar or other inert gas excited by the plasma excitation generating part at a pressure of 0.1-10Torr and a temperature of 25-500°C for 1-100 seconds.

[0045] After the above treatment, stop feeding Ar or other inert gases, and introduce nitrogen and silane (SiH 4 ) or compounds containing silicon, both nitrogen and silane are introduced at a flow rate of 10sccm-1000sccm. Under the pressure of 0.1-10 Torr, the temperature of 25-500 DEG C is deposited on the surface of the...

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Abstract

The invention relates to a PECVD device suitable for coating a film on an irregular surface and having a higher deposition rate, a method for preparing the irregular surface film by adopting the PECVD device and an application of the PECVD device. Process gas or process gas excited by plasma is directly introduced into a to-be-coated sample, so that the PECVD device can be used for obtaining the high-quality irregular surface film at a higher deposition rate under a condition that a reaction cavity is not additionally arranged or a reaction cavity with smaller size is only required to be arranged. The PECVD device is suitable for preparing various irregular surface films, such as medical drug container protective films, food container protective films, petroleum transmission pipeline inner wall protective films, crystalline silicon solar cell double-layer antireflection layers, large-scale integrated circuit insulating films and other irregular surface films.

Description

technical field [0001] The invention relates to a device suitable for preparing plasma-enhanced chemical vapor deposition (PECVD) films on irregular surfaces, a method for preparing irregular surface films by using the device, and an application of the device. Background technique [0002] Plasma-enhanced chemical vapor deposition (PECVD) technology is a new preparation for the growth of thin-film materials by means of glow or arc discharge plasma to cause chemical deposition of gaseous substances containing film chemical components on the designated coated surface. Technology, which has the advantages of low deposition surface temperature, high deposition efficiency, simple equipment structure, and easy operation. [0003] The current plasma-enhanced chemical vapor deposition (PECVD) devices are mainly divided into direct deposition and indirect deposition. In direct deposition, the sample to be deposited is located between the sources of the plasma, and the ions and elect...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/455C23C16/50
Inventor 施嘉诺曹喆婷
Owner 上海品吉技术有限公司
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