plasma etching method

Abstract

The invention relates to a plasma etching method for processing a wafer placed in a plasma reaction chamber, comprising the following steps: feeding process gas into the reaction chamber, the process gas at least including etching gas and side Wall protection gas; a radio frequency electric field with pulsed power is generated in the reaction chamber, so that the etching process and the side wall protection process are alternately performed in the reaction chamber. It reduces the wavy appearance on the side wall during the etching process, and has a simple structure and convenient implementation.

Description

technical field [0001] The invention relates to a semiconductor processing and manufacturing method, more specifically, to a plasma etching method. Background technique [0002] Through silicon via (through silicon via, TSV for short) technology can maximize the density of chips stacked in the three-dimensional direction, the shortest interconnection lines between chips, and the smallest size, which can effectively realize this kind of 3D chip stacking and manufacture Chips with more complex structures, more powerful performance, and more cost-effectiveness have become one of the most compelling technologies in electronic packaging technology. [0003] The TSV etching process is a process in which the etching process and the polymer deposition process are alternately performed, that is, a part of the substrate is first etched, and then the polymer is deposited on the sidewall to prevent the next etching opening from being too large, and then continue A round of etching and ...

AI Technical Summary

Problems solved by technology

However, due to hardware limitations, it is impossible to achieve very fast switching between etching and deposition in traditional processes, so the etched sidewall morphology will appear wavy, such as figure 1 As shown, the wavy structure will affect the effect of the subsequent filling metal and affect the electrical performance

Images