An igbt module gate drive resistance equivalent adjustment circuit

Abstract

The present invention proposes an equivalent adjustment circuit for gate drive resistance of an IGBT module, comprising an IGBT module, an MCU, a first optocoupler and a drive module, a first resistor is connected between the MCU and the first optocoupler, and the drive module and the IGBT module A gate drive resistor is connected between them, and there is an integral circuit between the first optocoupler and the drive module. The integral circuit includes the equivalent resistance of the integral circuit and the first capacitor. By changing the resistance value of the equivalent resistance of the integral circuit, the integral circuit can be adjusted The time constant of the gate drive resistor can be adjusted equivalently. The equivalent adjustment circuit of the gate drive resistance of the IGBT module of the present invention can adjust the equivalent resistance of the gate drive resistance, and can drive IGBT modules with different powers without manually changing the gate drive resistance, thereby optimizing the working state of the IGBT modules.

Description

technical field [0001] The invention relates to the technical field of circuit design, in particular to an IGBT module gate drive resistance equivalent adjustment circuit. Background technique [0002] IGBT (Insulated Gate Bipolar Transistor, Insulated Gate Bipolar Transistor) is a composite power electronic device that came out in the mid-1980s. In terms of structure, it is equivalent to a MOSFET (Metal OxideSemiconductor Field Effect Transistor, metal-oxide- BJT (Bipolar Junction Transistor, Bipolar Junction Transistor) with thick base driven by Semiconductor Field Effect Transistor). The characteristics of high current density, on-state voltage drop, and high withstand voltage are widely used in power electronic equipment. [0003] At present, commonly used IGBT modules are driven by circuits such as EXB841, A316J, M57962, etc. These circuits are driven by optocoupler isolation, such as figure 1 As shown in the figure, U1 in the figure is MCU (Micro Control Unit, micro ...

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Problems solved by technology

like figure 1 As shown, the gate drive resistor R5 in the prior art is fixed in the circuit by manual welding, its resistance value is fixed, and the resistance value of the gate drive resistor R5 cannot be adjusted according to the power of the IGBT module U4, and then Affect the working effect of IGBT module U4

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