Electrostatic discharge protection circuit
An electrostatic discharge protection and electrostatic discharge technology, applied in the direction of circuits, electrical components, electric solid devices, etc., can solve problems such as inability to play a protective role, poor conduction uniformity, and affect the ability of electrostatic discharge protection circuits, so as to improve conduction Effect of Uniformity and Electrostatic Discharge Capability
Active Publication Date: 2016-10-05
SEMICON MFG INT (SHANGHAI) CORP
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Problems solved by technology
However, the conduction uniformity of multiple GGNMOS transistors in the existing electrostatic discharge protection circuit is poor. Usually all the GGNMOS transistors cannot be turned on at the same time. When some of them are turned on, the others are not easy to turn on, which will seriously affect the static The ability of the discharge protection circuit, that is, if only part of the GGNMOS transistor is turned on, then the non-conducted GGNMOS transistor cannot play a protective role, which reduces the ability of electrostatic discharge protection
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[0027] Please refer to figure 2 with image 3 , image 3 It is the I / V characteristic diagram of the drain current and the drain voltage of the conventional GGNMOS transistor. When the electrostatic voltage generated by the electrostatic pulse is applied to the drain 21 of the GGNMOS transistor, the electrostatic voltage is mainly applied to the reverse-biased PN junction between the drain 21 of the GGNMOS transistor and the substrate 20, forming a depletion region , because the depletion region is a high-resistance region, when the drain voltage continues to increase, the drain current remains basically unchanged, and the drain current is mainly the reverse cut-off current of the collector of the parasitic triode; until the drain voltage reaches The first breakdown voltage V 1, the first breakdown voltage is the reverse-biased breakdown voltage of the PN junction between the drain 21 and the substrate 20, and the drain voltage applied to the depletion region is large enou...
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An electrostatic discharge protection circuit comprises a plurality of electrostatic discharge protection units. Each electrostatic discharge protection unit comprises a NMOS transistor, a capacitor, a first resistor and a second resistor, wherein a first end of the capacitor is connected with an electrostatic discharge input end, a second end of the capacitor is connected with a first end of the second resistor, a first end of the first resistor is connected with the electrostatic discharge input end, a second end of the resistor is connected with a second end of the first resistor and a drain electrode of the NMOS transistor, a source electrode and a substrate of the NMOS transistor are connected with the ground terminal, and a grid electrode of the NMOS transistor of each electrostatic discharge protection unit is connected with the second end of the capacitor in another corresponding electrostatic discharge protection unit. By means of the electrostatic discharge protection circuit, the first breakdown voltage of the NMOS transistor can be reduced, meanwhile, the electrostatic discharge protection units can stay in the conducting state, and the conducting uniformity and the electrostatic discharge capacity of the electrostatic discharge protection circuit are improved.
Description
technical field [0001] The invention relates to the design field of electrostatic protection circuits for integrated circuits, in particular to an electrostatic discharge protection circuit. Background technique [0002] As semiconductor chips are used more and more widely, the electrostatic damage involved in semiconductor chips is also more and more extensive. Usually, the static electricity of the human body wearing nylon products may reach a high voltage of 21000V, and an electrostatic discharge of about 750V can generate sparks, while an electrostatic voltage of only about 10V may damage chips without electrostatic discharge (ESD) protection. There are many designs and applications of electrostatic discharge protection circuits, usually including: gate grounded N-type field effect transistor (Gate Grounded NMOS, GGNMOS) protection circuit, diode protection circuit, silicon controlled rectifier (Silicon Controlled Rectifier, SCR) protection circuit Wait. [0003] Among...
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IPC IPC(8): H01L27/02
Inventor 冯军宏甘正浩
Owner SEMICON MFG INT (SHANGHAI) CORP