Self-assembled nanoparticles based rfid tags
A nanoparticle and metal nanoparticle technology, applied in semiconductor devices, electrical components, transistors, etc., can solve the problems of expensive silicon-based production process, easy to melt flexible substrates, etc., and achieve the effect of low cost and low manufacturing cost
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no. 1 example
[0039] In a first embodiment, the array of nanoparticles 32 is formed by first immersing the substrate 20 in a nanoparticle solution containing the nanoparticles 32 to be coated onto the substrate 20 for 1-3 hours. In one embodiment, the substrate 20 is immersed in the nanoparticle solution for 2 hours. When the substrate 20 is immersed in the nanoparticle solution, the nanoparticles 32 in the nanoparticle solution undergo self-assembly to form an array of nanoparticles 32 . During the immersion step, an array of nanoparticles 32 is formed directly on the substrate 20 . In one embodiment, nanoparticles 32 undergo self-assembly in a glove box (ie, immersing substrate 20 in a nanoparticle solution) to prevent O 2 and H 2 O pollution. After the dipping step, the substrate 20 coated with the array of nanoparticles 32 is dried by completely evaporating the residual nanoparticle solution left on the substrate.
no. 2 example
[0041] In a second embodiment, a nanoparticle solution is placed in a container, and the nanoparticles 32 in the nanoparticle solution are allowed to undergo self-assembly to form a 2D self-assembled nanoparticle monolayer on the surface of the nanoparticle solution. In one embodiment, the self-assembly is performed in a glove box to prevent O 2 and H 2 O pollution. After the solvent used to disperse the nanoparticles was completely evaporated, the two-dimensional self-assembled array of nanoparticles 32 was first lifted from the solution surface using the PDMS mat by Langmuir-Schaefer deposition, and then the PDMS mat was bonded to the substrate. 20 Conformal contact for about 10 seconds. The prepared array of ordered nanoparticles 32 can be transferred intact to both hydrophobic and hydrophilic substrates 20 .
[0042] After step 46, in step 48, source 26 and drain 28 are formed on semiconductor device 100 through a shadow mask. The source and drain electrodes 26, 28 are...
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