Electric potential induced attenuation prevention crystalline silicon battery and preparation method thereof

A potential-induced attenuation, crystalline silicon battery technology, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of reduced battery efficiency, high extinction coefficient of silicon nitride, and reduced photo-generated current, and achieves a simple method and good anti-PID , the effect of low cost

Inactive Publication Date: 2014-07-16
SUZHOU TALESUN SOLAR TECH CO LTD
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Problems solved by technology

[0005] Generally, the density of the silicon nitride anti-reflection film is increased on the battery side, that is, the method of increasing the refractive index is used to block the erosion of positive ions on the PN junction, thereby reducing the influence of the PID effect, but this method requires silicon nitride The refractive index of the silicon nitride is increased to about 2.2. The extinction coefficient of silicon nitride with such a high refractive index will be very high. The silicon nitride film itself will absorb more light, and the light incident on the substrate will decrease, resulting in a decrease in the photogenerated current, resulting in drop in battery efficiency

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  • Electric potential induced attenuation prevention crystalline silicon battery and preparation method thereof

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Embodiment Construction

[0029] The present invention will be described in detail below with reference to the accompanying drawings and in combination with embodiments.

[0030] refer to figure 1 As shown, a crystalline silicon cell with resistance to potential-induced degradation includes an amorphous silicon layer 2 covering a silicon substrate 1, a Si-rich silicon nitride layer 3 for passivation, and a N-rich layer for antireflection. Silicon nitride layer 4. The thickness of the amorphous silicon layer 2 is 2-10 nm. The thickness of the Si-rich silicon nitride layer 3 is 10-30 nm. The thickness of the N-rich silicon nitride layer 4 is 40-70nm.

[0031] The specific implementation takes tubular PECVD as an example, the flow rate of the first layer of NH3 is set to 0, the flow rate of SiH4 is set to 1800 sccm, and the time is set to 15s to form a 2-10nm anti-PID dense amorphous silicon layer 2 on the surface of the silicon substrate 1 , the flow rate of the second layer of NH3 is set to 3.5slm, ...

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Abstract

The invention discloses an electric potential induced attenuation prevention crystalline silicon battery. The electric potential induced attenuation prevention crystalline silicon battery comprises an amorphous silicon layer, a silicon-rich silicon nitride layer which has a passivation effect and a nitrogen-rich silicon nitride layer which has an antireflection effect, wherein the amorphous silicon layer, the silicon-rich silicon nitride layer and the nitrogen-rich silicon nitride layer sequentially cover a silicon substrate. According to the electric potential induced attenuation prevention crystalline silicon battery, an antireflecting layer structure of the battery is mainly improved, a layer of compact amorphous silicon is deposited between traditional single-layer or multi-layer silicon nitride and the crystalline silicon substrate by a PECVD method, the compact amorphous silicon layer can prevent erosion of positive ions to PN junctions, and therefore the influence of a PID effect is lowered. The electric potential induced attenuation prevention crystalline silicon battery can be achieved by only making simple modification on a process on existing equipment, and is compatible with an existing process, simple in method and low in cost.

Description

technical field [0001] The invention relates to the field of crystalline silicon solar cells, in particular to a crystalline silicon cell capable of resisting potential-induced attenuation and a preparation method thereof. Background technique [0002] Potential-induced degradation (PID) phenomenon refers to the phenomenon that the output power of solar crystalline silicon modules is attenuated when they work in a humid and hot environment and high voltage for a long time. It is generally believed that the sodium ions in the glass are precipitated in a hot and humid environment, and through the circuit formed by the crystalline silicon battery and packaging materials to the frame of the module under high voltage, the PN junction of the battery is eroded, which is the main cause of the PID phenomenon. In recent years, PID has become one of the important factors for foreign buyers to complain about the quality of domestic modules. In severe cases, it can cause the power of a m...

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Application Information

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IPC IPC(8): H01L31/0216H01L31/0352H01L31/18H01L31/20
CPCH01L31/02161Y02P70/50
Inventor 陆俊宇保罗魏青竹连维飞王志刚易辉汪燕玲
Owner SUZHOU TALESUN SOLAR TECH CO LTD
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