Test device for acquiring on-off state of thyristor impulse power switch assembly

Abstract

The invention provides a test device for acquiring the on-off state of a thyristor impulse power switch assembly. The test device comprises a current sensor, a preprocessing circuit, a constant current source conversion circuit, a sampling resistor, a shaping and comparing circuit, a data collector, an electro-optic conversion circuit, a photovoltaic conversion circuit and a control module. The current sensor is arranged in a resistance-capacitance absorption circuit of a thyristor assembly in a sleeved mode. The input end of the preprocessing circuit is connected with the current sensor through a first double-core shielding double-twisted cable. The input end of the constant current source conversion circuit is connected with the output end of the preprocessing circuit. The input end of the shaping and comparing circuit is connected with the two ends of the sampling resistor. The input end of the data collector is connected with the two ends of the sampling resistor. The input end of the electro-optic conversion circuit is connected with the output end of the shaping and comparing circuit. The input end of the photovoltaic conversion circuit is connected with the output end of the electro-optic conversion circuit through a cable. The control module is connected with the output end of the photovoltaic conversion circuit. According to the test device, the work state of the impulse power switch assembly can be monitored fast, reliably and safely, state signals can be transmitted in a long distance, and the test device can adapt to a strong electromagnetic environment occasion.

Description

technical field [0001] The invention relates to the technical field of electronic power, in particular to a test device for obtaining the on-off state of a thyristor pulse power switch assembly. Background technique [0002] At present, power electronics technology has developed to a very high level. High-voltage and high-power power electronic devices, such as IGBT (Insulated Gate Bipolar Transistor, insulated gate bipolar transistor), power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor, metal-oxide layer semiconductor field effect transistor), GTO (Gate Turn-Off Thyristor, the gate can turn off the thyristor), thyristor SCR (silicon controlled rectifier), IGCT (Integrated Gate Commutated Thyristors, integrated gate commutated thyristor), MAGT (MOS Gate control-thyristor) and IEGT (Injection Enhanced Gate Transistor, electron injection enhanced gate transistor) have been successfully developed and used in a large number of projects, further promoting the develop...

AI Technical Summary

Problems solved by technology

A large number of engineering practices have shown that when thyristors are used as pulse power switching components, open-circuit faults of thyristor components that do not conduct due to drive circuit failures, or short-circuit faults of thyristor components that are directly connected due to overheating breakdown due to long-term strong current In addition, there are a small number of short-circuit failures caused by overvoltage breakdown of thyristor components.

Both of these failures will directly affect the reliability and safety of the pulse power switch components.

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