Metal hard mask structure, manufacturing method and copper interconnection structure manufacturing method

Abstract

The invention provides a metal hard mask structure, a manufacturing method and a copper interconnecting structure manufacturing method. By forming inner wall metal mask layers different in etching selection ratio on the basis of an inner side wall of an existing metal hard mask layer, the shape of the etching forming structure is improved by utilizing the difference of the etching selection ratio of two metal hard mask layers on layer structures below the metal hard mask layers respectively in a follow-up etching process, the key dimension of a top end opening of the etching forming structure is increased, a larger process window is provided for a follow-up filling process, filling defects are effectively reduced, and the product performance is improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a metal hard mask structure, a manufacturing method and a copper interconnection structure manufacturing method. Background technique [0002] As the critical dimensions of semiconductor devices continue to shrink, void-free filling of copper interconnects becomes increasingly difficult. It is difficult to meet the requirements simply by relying on barrier&seed and electroplating copper (ECP) process progress, which requires other processes to provide a larger process window for barrier&seed and ECP. [0003] In order to reduce the RC delay (delay) of copper interconnection, porous low-k dielectric material is introduced, but the ensuing peeling damage (strip damage) becomes non-negligible. In order to overcome a series of challenges caused by the introduction of porous low dielectric materials, the process integration adopts a titanium nitride (TiN) metal hard mask (m...

AI Technical Summary

Problems solved by technology

However, this relatively straight trench morphology is a great challenge to the direct filling of the subsequent interconnected copper in the trench, which is prone to filling defects such as voids (gap), which in turn causes the filled copper to peel off from the trench ( strip damage), causing the copper interconnect structure to fail or degrade its performance

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