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High electron mobility transistors

A high electron mobility, transistor technology, applied in the direction of circuits, electrical components, semiconductor devices, etc., can solve the problem of reducing the electron mobility of the channel

Inactive Publication Date: 2014-07-23
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Conversely, reducing the concentration of the AlGaN donor layer improves the contact resistance but reduces the electron mobility in the channel

Method used

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Embodiment Construction

[0030] The description herein is made in conjunction with the accompanying drawings, wherein like reference numerals are generally used to indicate like elements throughout the description and the various structures are not necessarily drawn to scale. In the following description, for purposes of explanation, numerous specific details are set forth to facilitate understanding. It will be apparent, however, to one of ordinary skill in the art that one or more aspects described herein may be practiced with a lesser degree than these specific details. In other instances, well-known structures and devices are shown in block diagram form to aid in understanding.

[0031] Figure 1 shows Al x Ga (1-x) A cross-sectional view of transistor 100A of N donor layer 108A. A heterojunction 110A is formed between the donor layer 108A and the GaN channel layer 112A. Electrons generated by the donor layer 108A diffuse into the GaN channel layer 112A to form a high-mobility / high-concentratio...

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Abstract

The present disclosure relates to a donor layer of bi-layer AlGaN and associated method of fabrication within a high electron mobility transistor (HEMT) configured to provide low-resistance ohmic source and drain contacts to reduce power consumption, while maintaining a high-mobility of a two-dimensional electron gas (2DEG) within a channel of the HEMT. The donor layer of bi-layer AlGaN comprises a mobility-enhancing layer of AlzGa(1-z)N, a resistance-reducing layer of AlxGa(1-x)N disposed over the mobility-enhancing layer, wherein the ohmic source and drain contacts connect to the HEMT. A channel layer of GaN is disposed beneath the mobility-enhancing layer, wherein a 2DEG resides, forming the channel of the HEMT.

Description

technical field [0001] The present invention generally relates to the field of semiconductor technology, and more particularly, to semiconductor devices and methods of forming the same. Background technique [0002] High electron mobility transistors (HEMTs) are used in integrated circuits for high frequency applications due to their high efficiency relative to other power semiconductor devices such as insulated gate bipolar transistors and thyristors. HEMTs utilize a heterojunction between two semiconductor materials with different bandgaps to form a device channel, replacing doped regions in metal-oxide-semiconductor field-effect transistors (MOSFETs). Two exemplary materials for forming a heterojunction within a HEMT are a doped wide bandgap n-type AlGaN donor layer connected to an undoped narrow bandgap GaN channel layer. As the Al concentration of the AlGaN donor increases, the formed ohmic contacts to the AlGaN donor layer have increased contact resistance. Conversel...

Claims

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Application Information

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IPC IPC(8): H01L29/778H01L29/10H01L21/335
CPCH01L29/432H01L29/66462H01L29/7783H01L29/2003H01L29/201H01L29/7787H01L29/205
Inventor 刘柏均喻中一陈祈铭江振豪
Owner TAIWAN SEMICON MFG CO LTD