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Method of preparing potassium titanyl phosphate film by utilizing ion injection

A technology of potassium titanyl phosphate and ion implantation, applied in the field of nonlinear optical materials

Inactive Publication Date: 2014-07-30
SHANDONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

So far, we have not used the ion implantation method to realize the relevant report of potassium titanyl phosphate film stripping

Method used

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  • Method of preparing potassium titanyl phosphate film by utilizing ion injection
  • Method of preparing potassium titanyl phosphate film by utilizing ion injection
  • Method of preparing potassium titanyl phosphate film by utilizing ion injection

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] H ions with an energy of 117keV are implanted into the X-tangential potassium titanyl phosphate material at room temperature, and the implantation dose range: 5×10 16 Ions / cm2~8×10 16 Ions / square centimeter; after implantation, the sample is bound to the silicon substrate with resin glue and annealed. The annealing temperature is gradually increased from room temperature to 200°C, and the total annealing time is 4 hours. The test results are as follows:

[0025] Sample serial number

Embodiment 2

[0027] H ions with an energy of 117keV are implanted into the Z-tangential potassium titanyl phosphate material at room temperature, and the implantation dose range: 5×10 16 Ions / cm2~8×10 16 Ions / square centimeter; after implantation, the sample is bound to the silicon substrate with resin glue and annealed. The annealing temperature is gradually increased from room temperature to 200°C, and the total annealing time is 2 hours. The test results are as follows:

[0028]

Embodiment 3

[0030] He ions with an energy of 200keV are implanted into the X and Z tangential potassium titanyl phosphate materials at room temperature, and the implantation dose range: 1×10 16 Ions / cm2~10×10 16 Ions / square centimeter; after implantation, the sample is bound to the silicon substrate with resin glue and annealed. The annealing temperature is gradually increased from room temperature to 600°C, and the total annealing time is 6 hours. The test results are as follows:

[0031]

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Abstract

The invention relates to a method of preparing a potassium titanyl phosphate film by utilizing ion injection. The method comprises the following steps: respectively placing a potassium titanyl phosphate crystal into alcohol and acetone and carrying out ultrasonic cleaning treatment; injecting light ions-H ions or He ions with low energy into a potassium titanyl phosphate material at a normal temperature, wherein energy range of the injected ions is 100 keV-300 keV, the dosage range of the injected ions is 1*10<16> ions / square centimeter-10*10<16> ions / square centimeter; binding the material which is injected with light ions on a substrate by resin, or directly bonding the material which is injected with the light ions on the substrate, adhering an injection surface on the substrate; carrying out annealing treatment onto a sample. The method disclosed by the invention can be used for obtaining a single-crystal material with a better crystal lattice structure; moreover, the method is not high in requirements for a substrate material, and very easy for realization of binding.

Description

technical field [0001] The invention relates to a method for preparing potassium titanyl phosphate (KTiOPO) by ion implantation. 4 ) thin film method, belongs to the technical field of nonlinear optical materials. Background technique [0002] In modern technology, optical devices gradually replace electronic devices in optical signal processing, because, compared with electronic devices, optoelectronic devices have many advantages, such as larger bandwidth, wavelength division multiplexing, etc., so more optoelectronic devices Integration into chips has become a hot research topic today. A waveguide structure with a large refractive index difference is a necessary condition for realizing highly integrated optical devices. There are many methods to fabricate waveguide structures, such as chemical vapor deposition, radio frequency sputtering, molecular beam epitaxy, and pulsed laser deposition, but these methods are difficult to produce high-quality single crystal structure...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B31/22C30B33/02C30B29/10C30B29/64
Inventor 卢霏马钰洁马长东
Owner SHANDONG UNIV
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