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A MOS gate-controlled thyristor

A thyristor, gate-controlled technology, applied in thyristor, electrical components, circuits, etc., can solve the problems of complicated manufacturing process, weak turn-off capability, lack of current saturation characteristics, etc., to reduce turn-off time, reduce turn-off loss, and improve The effect of the turn-off loss tradeoff

Inactive Publication Date: 2017-01-18
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] What the present invention aims to solve is to solve the above-mentioned disadvantages of lack of current saturation characteristics and weak turn-off ability in the traditional MCT, and the existing new structure has the problem of complicated manufacturing processes, and proposes a JFET-controlled MOS gate-controlled thyristor (JFET -MCT)

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  • A MOS gate-controlled thyristor
  • A MOS gate-controlled thyristor
  • A MOS gate-controlled thyristor

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Embodiment Construction

[0019] Below in conjunction with accompanying drawing, describe technical scheme of the present invention in detail:

[0020] Such as image 3 As shown, a MOS gate-controlled thyristor of the present invention has a cell structure including an anode P region 2, a metallized anode 1 arranged on the lower end surface of the anode P region 2, and an N-type buffer layer arranged on the upper end surface of the anode P region 2 3 and the N disposed on the upper end face of the N-type buffer layer 3 - Drift region 4; the N - The upper layer of the drift region 4 is provided with a P well 8, an N well 9 and an insulating gate, wherein the P well 8 and the N well 9 are located in the middle, and the two sides are insulating gates; The gate oxide layer 5 is composed of a metallized gate 7 on the upper surface of the polysilicon gate; the N well 9 is located on the upper end surface of the P well 8; the N well 9 includes two independent P + Cathode contact area 10, two P + The catho...

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Abstract

The invention relates to semiconductor technology, specifically designing a MOS gate-controlled thyristor. The present invention improves the P+ cathode contact region 10, increases the width of the P+ cathode contact region 10, changes the metallurgical junction morphology, and reduces the transport channel of electrons flowing in from the cathode metal 11. The forward working characteristics of the device are controlled by the JFET composed of the P+ cathode contact region 10 and the N well 9, and the channel pinch-off effect can occur under a relatively small anode voltage, which can control the saturation current of the device. The junction depth and width of the P+ cathode region contact region 10 can be optimized according to device design requirements. The invention is particularly applicable to MOS gated thyristors.

Description

technical field [0001] The invention relates to semiconductor technology, specifically designing a MOS gate-controlled thyristor. Background technique [0002] Thyristor is the abbreviation of thyristor, and it was also referred to as thyristor in the past. Shortly after the application of power diodes, Bell Laboratories in the United States invented the thyristor. In 1957, General Electric Company of the United States developed the world's first thyristor product, which was commercialized in 1958. Since the 1980s, researchers have tried to replace it with insulated gate bipolar transistors (IGBTs). However, thyristors still play an important role in large-capacity applications such as high voltage and high current. This is precisely due to the internal working principle of the thyristor: when working in the forward direction, the PNP and NPN transistors form a positive feedback, the anode has hole injection, and the cathode side also has electron injection, and the conduct...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/74H01L29/423H01L29/10
CPCH01L29/0839H01L29/42308H01L29/7455H01L29/749
Inventor 陈万军肖琨程武杨骋王珣阳张波
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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