Unlock instant, AI-driven research and patent intelligence for your innovation.

Target assembly, sputtering device and sputtering method for sputtering chamber

A sputtering device and sputtering chamber technology, used in sputtering device, glass substrate sputtering, target component design field, can solve the bottleneck of optimization, design and process improvement, affect the uniformity of glass substrate film formation, etc. problems, to achieve the effect of improving the yield of the process and improving the quality

Active Publication Date: 2014-08-06
TCL CHINA STAR OPTOELECTRONICS TECH CO LTD
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The target assembly with this structure leads to the fact that the edge of the glass substrate in the long side direction cannot be optimized during film formation during the sputtering process of the glass substrate, which affects the uniformity of the film formation on the glass substrate and creates a bottleneck for design and process improvement.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Target assembly, sputtering device and sputtering method for sputtering chamber
  • Target assembly, sputtering device and sputtering method for sputtering chamber
  • Target assembly, sputtering device and sputtering method for sputtering chamber

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] like image 3 As shown, the target assembly 10 in this embodiment includes: 12 first targets 101 arranged in parallel along the X direction (that is, the value of n is 12) and two second targets 102 arranged in parallel along the Y direction . Wherein, the second target 102 extends along the X direction until it is flush with the beginning of the first first target 101a and the end of the nth first target 101b, that is, all the first targets 101 are located at this between the two second targets 102 . The start and end are aligned along the X direction, that is, the start of the first first target 101a refers to the side of the first first target 101a away from the second first target, and the nth The end of the first target 101b refers to the side of the nth first target 101b away from the (n−1)th first target.

[0035] In this embodiment, all the first targets 101 have the same width D1, all the second targets 102 have the same width D2, and the width D1 of the fir...

Embodiment 2

[0038] The target assembly 10 provided in this embodiment is as Figure 4 As shown, the difference from the target assembly provided in Example 1 is that the second target 102 is composed of 12 third targets 1021 arranged in parallel along the X direction, and each third target 1021 is powered by a power source 2 are controlled separately.

[0039] In this embodiment, all the third targets 1021 have the same length L1, and the length L1 of the third targets 1021 is equal to the width D1 of the first target 101 .

[0040] In this embodiment, the two second targets 102 are divided into multiple third targets 1021, and the voltage provided by the power source 2 to the multiple third targets 1021 is optimized, so that the effect of sputtering on the glass substrate is better. . Especially when the area of ​​film formation is large, the optimization of edge position in this solution can obtain better film formation effect.

Embodiment 3

[0042] like Figure 5 As shown, the target assembly 10 in this embodiment includes: 12 first targets 101 arranged in parallel along the X direction (that is, the value of n is 12) and two second targets 102 arranged in parallel along the Y direction . Wherein, the second target 102 extends along the X direction until it is flush with the start of the second first target 101c and the end of the n-1th first target 101d, that is, the second to n-1th The first targets 101 are located between the two second targets 102; the first and nth first targets 101a, 101b extend along the Y direction until they are connected to the upper end of the first second target 102a and the first The lower ends of the two second targets 102b are flush, that is, the two second targets 102 are located between the first and nth first targets 101a, 101b. The start and end are aligned along the X direction, that is, the start of the second first target 101c refers to the side of the second first target 1...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a target assembly for a sputtering chamber. The target assembly comprises n first targets which are arranged in a first direction and two second targets which are arranged in a second direction orthogonal to the first direction, wherein at least part of first targets are arranged between the two second targets; meanwhile, each first target and each second target are respectively controlled by a power source, and n is more than or equal to 2. The invention also discloses a sputtering device comprising the target assembly and a method for sputtering a glass substrate by adopting the sputtering device.

Description

technical field [0001] The invention relates to the technical field of physical vapor deposition, and in particular to a design of a target assembly for improving coating uniformity, a sputtering device including the target assembly, and a method for sputtering a glass substrate by using the sputtering device. Background technique [0002] Sputtering (sputter) is a physical vapor deposition (Physical Vapor Deposition, PVD) process, its physical phenomenon is in a relatively stable vacuum state, a glow discharge occurs between the cathode and anode, and the gas molecules between the electrodes are ionized to produce Charged charge, in which the positive ions are accelerated by the negative potential of the cathode and hit the target on the cathode, sputtering their atoms and other particles, and the sputtered atoms are deposited on the substrate of the anode to form a thin film. At present, in the process of preparing a liquid crystal panel, a PVD sputtering process is genera...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34
Inventor 柴立张正义陈一翔
Owner TCL CHINA STAR OPTOELECTRONICS TECH CO LTD