A method for positioning and laterally growing ZnO nanowires on silicon electrodes

Abstract

The invention discloses a method for positioning transversely-growing zinc oxide nanowires on a silicon electrode through chemical vapor deposition. The method comprises the steps as follows: preparation of zinc vapor, delivery of the zinc vapor and synthesis and deposition of zinc oxide. In the step of delivery of the zinc vapor, the included angle formed by the speed direction and a silicon electrode growth surface is in a range of 85-95 degrees when the zinc vapor is contacted with the silicon electrode growth surface. Particularly, the included angle formed by the speed direction and the gravity direction of the zinc vapor is in a range of 0-5 degrees. According to the method, the included angle formed by the speed direction and the silicon electrode growth surface is in the range of 85-95 degrees when the zinc vapor is contacted with the silicon electrode, the zinc vapor firstly reacts with oxygen on edges to be crystalized to produce zinc oxide nanometer points, and the nanometer points grow preferentially and finally form the transversely-growing zinc oxide nanowires. According to the method, a metal catalyst is not required to be evaporated on the surface in advance, and the method has the advantages that processes are simplified and impurities are avoided; and the transversely-growing zinc oxide nanowires can also be independently prepared on the silicon electrode with the method.

Description

technical field [0001] The invention belongs to the field of semiconductor device manufacturing, and relates to a method for positioning and laterally growing zinc oxide nanowires on a silicon electrode by using a chemical vapor deposition method. Background technique [0002] The document [M.S.Islametal, Nanotechnology, 2004, 15, L5] discloses a method of using gold as a catalyst to prepare a lateral nanowire circuit by high-temperature CVD. The nanowire obtained by this method grows along the lateral direction and bridges two electrodes. figure 1 A schematic diagram of the product obtained by this method. [0003] This method needs to plate a layer of gold film on the surface of the electrode as a catalyst. The introduction of the gold film not only complicates the process but also easily introduces metal impurities, and in this method, nanowires will grow on the surface of the electrode and in the lateral direction. [0004] The literature [JohnF.Conleyetal, AppliedPhysi...

AI Technical Summary

Problems solved by technology

[0007] Although this method does not have the zinc oxide film seed layer step, in the preparation process, a layer of zinc oxide film will still be formed on the surface of the silicon electrode first, which has the same defects as [JohnF.Conleyetal, AppliedPhysicsLetters, 2005, 87, 223114] ——Nanowires will grow on the surface of the electrode and in the lateral direction

Images