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Method for positioning transversely-growing zinc oxide nanowires on silicon electrode

A zinc oxide nanowire, lateral growth technology, applied in chemical instruments and methods, crystal growth, nanotechnology and other directions, can solve problems such as growing nanowires, and achieve the effect of process saving

Active Publication Date: 2014-08-06
CHONGQING INST OF GREEN & INTELLIGENT TECH CHINESE ACADEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] Although this method does not have the zinc oxide film seed layer step, in the preparation process, a layer of zinc oxide film will still be formed on the surface of the silicon electrode first, which has the same defects as [JohnF.Conleyetal, AppliedPhysicsLetters, 2005, 87, 223114] ——Nanowires will grow on the surface of the electrode and in the lateral direction

Method used

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  • Method for positioning transversely-growing zinc oxide nanowires on silicon electrode
  • Method for positioning transversely-growing zinc oxide nanowires on silicon electrode
  • Method for positioning transversely-growing zinc oxide nanowires on silicon electrode

Examples

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Embodiment 1

[0032] figure 2 It is a schematic diagram of the method for positioning and laterally growing zinc oxide nanowires on silicon electrodes in this embodiment.

[0033] In this embodiment chemical vapor deposition adopts such as figure 2 High temperature tube vacuum furnace shown in a, including Al 2 o 3 pipe and a boat-shaped raw material container located within the pipe; said Al 2 o 3 One end of the tube is provided with a gas inlet, the other end is provided with a gas outlet, and the pipe body is provided with electric coils for heating or heat preservation; the bottom of the boat-shaped raw material container is equipped with raw materials, and the top is placed with a downward facing surface without a metal-coated catalyst film. silicon substrate.

[0034] When using, first of all Al 2 o 3 The tube is evacuated and the Al is then heated with an electric coil 2 o 3 Tube to 950-970 ℃ and keep warm, the raw materials react in the high temperature environment, and f...

Embodiment 2

[0047] The difference between this embodiment and Embodiment 1 is that the growth surface of the silicon electrode used in this embodiment is etched with micrometer electrodes.

[0048] image 3 a is a schematic diagram of the growth process of zinc oxide nanowires in this embodiment, image 3 b for image 3 The enlarged view of the boat-shaped raw material container, silicon electrode substrate and nanowire in a, the difference between the nanowire growth process of this embodiment and Example 1 is that the silicon electrode used in this embodiment is etched with micron electrodes, and there are micrometer electrodes on the growth surface. There are many edges, and Zn vapor gathers on each edge and reacts with oxygen to crystallize and form zinc oxide nanodots; these zinc oxide nanodots grow preferentially along the direction perpendicular to the corners in the growth plane, forming lateral zinc oxide nanowires .

[0049] Figure 4 It is a scanning electron microscope ima...

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Abstract

The invention discloses a method for positioning transversely-growing zinc oxide nanowires on a silicon electrode through chemical vapor deposition. The method comprises the steps as follows: preparation of zinc vapor, delivery of the zinc vapor and synthesis and deposition of zinc oxide. In the step of delivery of the zinc vapor, the included angle formed by the speed direction and a silicon electrode growth surface is in a range of 85-95 degrees when the zinc vapor is contacted with the silicon electrode growth surface. Particularly, the included angle formed by the speed direction and the gravity direction of the zinc vapor is in a range of 0-5 degrees. According to the method, the included angle formed by the speed direction and the silicon electrode growth surface is in the range of 85-95 degrees when the zinc vapor is contacted with the silicon electrode, the zinc vapor firstly reacts with oxygen on edges to be crystalized to produce zinc oxide nanometer points, and the nanometer points grow preferentially and finally form the transversely-growing zinc oxide nanowires. According to the method, a metal catalyst is not required to be evaporated on the surface in advance, and the method has the advantages that processes are simplified and impurities are avoided; and the transversely-growing zinc oxide nanowires can also be independently prepared on the silicon electrode with the method.

Description

technical field [0001] The invention belongs to the field of semiconductor device manufacturing, and relates to a method for positioning and laterally growing zinc oxide nanowires on a silicon electrode by using a chemical vapor deposition method. Background technique [0002] The document [M.S.Islametal, Nanotechnology, 2004, 15, L5] discloses a method of using gold as a catalyst to prepare a lateral nanowire circuit by high-temperature CVD. The nanowire obtained by this method grows along the lateral direction and bridges two electrodes. figure 1 A schematic diagram of the product obtained by this method. [0003] This method needs to plate a layer of gold film on the surface of the electrode as a catalyst. The introduction of the gold film not only complicates the process but also easily introduces metal impurities, and in this method, nanowires will grow on the surface of the electrode and in the lateral direction. [0004] The literature [JohnF.Conleyetal, AppliedPhysi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B25/14C30B29/16C30B29/62H01L21/283B82Y40/00
Inventor 陆文强宋金会王亮李奇昆
Owner CHONGQING INST OF GREEN & INTELLIGENT TECH CHINESE ACADEMY OF SCI
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