Plasma reaction chamber electrode gap adjusting device and plasma reaction chamber

Abstract

The invention relates to an electrode gap adjusting device. Electrodes are located in a plasma reaction chamber and include the upper electrode and the lower electrode. The electrode gap adjusting device is characterized by comprising an upper electrode lifting device, the upper electrode lifting device comprises an upper fixing plate, a lifting plate, a lower fixing plate, a guiding supporting rod, a screw and a sliding rod, the upper fixing plate and the lower fixing plate are oppositely arranged in parallel, and the lifting plate is arranged between the upper fixing plate and the lower fixing plate in parallel; the guiding supporting rod and the screw are vertically installed between the upper fixing plate and the lower fixing plate and evenly distributed on the circle with the center of the upper fixing plate as the circle center and the certain distance as the radius; the sliding rod is arranged between the lifting plate and the upper electrode. According to the plasma reaction chamber electrode gap adjusting device and the plasma reaction chamber, the distance between the electrodes can be accurately controlled to achieve the optimal discharging position according to the etching technology requirement, and the technology precision can be better achieved.

Description

technical field [0001] The invention relates to the technical field of plasma processing, in particular to a plasma reaction chamber electrode gap adjustment device and a plasma reaction chamber. Background technique [0002] In the VLSI manufacturing industry, the plasma-enhanced chemical vapor deposition system (PECVD) is very popular in the preparation of silicon-based thin-film devices, which has the characteristics of low substrate temperature, fast growth speed, and good film uniformity. The chamber of PECVD equipment is fed with etching gas in a vacuum environment. After the etching gas is heated to a predetermined temperature, it is ionized by radio frequency to become plasma. These plasmas generate the desired thin film structures on the surface of the wafer. [0003] In traditional PECVD equipment, the discharge electrodes are all fixed electrodes, and the discharge is stable, but the optimum electrode spacing cannot be obtained according to the requirements of t...

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Problems solved by technology

[0004] In view of this, the object of the present invention is to provide a plasma reaction chamber electrode gap adjustment device for plasma processing equipment and a plasma reaction chamber provided with the above electrode gap adjustment device, so as to solve the problem of the plasma chamber in the prior art. The distance between the upper and lower electrodes of the chamber cannot be adjusted, resulting in the problem that the best electrode distance cannot be obtained according to the requirements of the film layer

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