End point detection method and polishing method of chemical mechanical polishing system

Abstract

The invention provides a device and a method for detecting a chemical mechanical polishing end point. The device at least comprises an infrared detector and a data processing and analyzing system, wherein the infrared detector is used for detecting the temperature change of a grinding surface of a wafer; the wafer at least comprises a substrate layer and a to-be-polished layer which is positioned on the substrate layer; the to-be-polished layer and the substrate layer have different heat conduction coefficients; the data processing and analyzing system is electrically connected with the infrared detector and is used for processing and analyzing the change of the output temperature of the infrared detector to obtain a curve representative of time-dependent temperature gradient change; the polishing end point of the wafer is judged according to the curve. According to the device for detecting the chemical mechanical polishing end point, which is provided by the invention, the data processing and analyzing system processes temperature information output by the infrared detector to obtain the curve representative of the time-dependent temperature gradient change of the polishing surface of the wafer, so that the chemical mechanical polishing end point can be conveniently judged from the obtained curve.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an endpoint detection method and a chemical mechanical polishing system polishing method. Background technique [0002] With the reduction of the feature size of semiconductor devices, if there are too large undulations on the surface of the wafer, it will become more and more difficult to control the line width in a series of subsequent processes. Therefore, in the semiconductor process flow, chemical mechanical polishing (CMP) is a very important process, sometimes also called chemical mechanical planarization (CMP). The so-called chemical mechanical polishing is a process that uses chemical and mechanical combined action to remove excess material from semiconductor silicon wafers and obtain a flat surface. [0003] Specifically, this polishing method is usually that the wafer 1A to be polished is clamped by the polishing head 2A, and pressed against a high-speed rotati...

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Problems solved by technology

[0007] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide an endpoint detection method and a polishing method for a chemical mechanical polishing system, which are used to solve the problem of inaccurate judgment of the polishing endpoint detection device in the prior art

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