Full-permeable bismuth-based pyrochlore thin film voltage-controlled varactor and manufacturing method thereof

A technology of pyrochlore and varactor, applied in the field of fully transparent bismuth-based pyrochlore thin-film voltage-controlled varactor and its preparation, achieving the effects of high transparency, good device stability, and moderate tuning rate

Inactive Publication Date: 2014-08-20
TIANJIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, if transparent electrodes and substrates are selected, it will be possible to experiment with fully transparent voltage-controlled varactors, which may be integrated in future visual electronic devices

Method used

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  • Full-permeable bismuth-based pyrochlore thin film voltage-controlled varactor and manufacturing method thereof
  • Full-permeable bismuth-based pyrochlore thin film voltage-controlled varactor and manufacturing method thereof
  • Full-permeable bismuth-based pyrochlore thin film voltage-controlled varactor and manufacturing method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0034] (1) Preparation of Bi by solid-state sintering method 1.5 Mg 1.0 Nb 1.5 o 7 target

[0035] Press Bi with electronic balance 1.5 Mg 1.0 Nb 1.5 o 7 The stoichiometric ratio of the corresponding elements weighs Bi with a purity of 99%. 2 o 3 , MgO and Nb 2 o 5 , after being fully mixed, pressed and formed under a pressure of 30Mpa, and finally placed in a box-type electric furnace and gradually heated to 1150°C, and kept for 10 hours.

[0036] (2) The AZO conductive glass substrate with AZO, that is, the Al-doped ZnO film as the bottom electrode layer, is ultrasonically cleaned with acetone, ethanol and deionized water, and cleaned with N 2 Blow dry and place on magnetron sputtering sample stage.

[0037](3) Pump the background vacuum of the magnetron sputtering system to 6.0×10 -6 Torr, then heat the AZO conductive glass substrate to 500 °C.

[0038] (4) with high purity (99.99%) Ar and O 2 As the sputtering gas, the flow ratio of argon and oxygen was 17:3...

Embodiment 2

[0045] (1) Preparation of Bi by solid-state sintering method 1.5 Zn 1.0 Nb 1.5 o 7 target

[0046] Press Bi with electronic balance 1.5 Zn 1.0 Nb 1.5 o 7 The stoichiometric ratio of the corresponding elements weighs Bi with a purity of 99%. 2 o 3 , ZnO and Nb 2 o 5 , after being fully mixed, pressed and formed under a pressure of 30Mpa, and finally placed in a box-type electric furnace and gradually heated to 1050°C, and kept for 10 hours.

[0047] (2) The AZO conductive glass substrate with AZO, that is, the Al-doped ZnO film as the bottom electrode layer, is ultrasonically cleaned with acetone, ethanol and deionized water, and cleaned with N 2 Blow dry and place on magnetron sputtering sample stage.

[0048] (3) Pump the background vacuum of the magnetron sputtering system to 7.0×10 -6 Torr, then heat the AZO conductive glass substrate to 500 °C.

[0049] (4) with high purity (99.99%) Ar and O 2 As the sputtering gas, the flow ratio of argon and oxygen was 17:...

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Abstract

The invention discloses a manufacturing method of a full-permeable bismuth-based pyrochlore thin film voltage-controlled varactor. The manufacturing method comprises the steps that firstly, a bismuth-based pyrochlore target is manufactured through a solid-state sintering method, a conductive glass substrate with an AZO thin film serving as a bottom electrode layer is used, a magnetron sputtering deposition technology is utilized, Ar and O2 are used as sputtering gas, a bismuth-based pyrochlore thin film is obtained through deposition, and post-annealing treatment is conducted in oxygen; secondly, ZnO ceramic doped with 3at% of Al is used as the target, an AZO thin film with the thickness of 100-600 nm is obtained through sputtering deposition, a transparent top electrode is manufactured, and the full-permeable bismuth-based pyrochlore thin film voltage-controlled varactor is obtained. According to the manufacturing method of the full-permeable bismuth-based pyrochlore thin film voltage-controlled varactor, the voltage-controlled varactor is high in transparency and moderate in tunability, a device is high in stability, and an excellent electronic component basis is provided for development and application of transparent communication and display devices.

Description

technical field [0001] The invention relates to electronic information materials and components, in particular to a fully transparent bismuth-based pyrochlore film voltage-controlled varactor and a preparation method thereof. Background technique [0002] Transparent solid-state electronic devices have promising applications in transparent displays, electronic paper, and other large-area transparent electronic systems. As an important part of the electronic system, the voltage-controlled varactor is an essential component of electronic communication equipment, so realizing the transparency of the voltage-controlled varactor is a necessary link to realize the transparent display of electronic communication equipment. [0003] Bismuth-based pyrochlore film is an ideal material for making voltage-controlled varactors due to its high dielectric constant and small loss factor. Bi prepared on the Pt electrode 1.5 Zn 1.0 Nb 1.5 o 7 Thin film or Bi 1.5 Mg 1.0 Nb 1.5 o 7 The...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01G7/06
Inventor 李玲霞于仕辉董和磊许丹金雨馨
Owner TIANJIN UNIV
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