Plasma processor

A plasma and processing device technology, applied in the field of plasma processing devices

Active Publication Date: 2014-08-27
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, when the high-frequency power is increased stepwise, the traveling wave voltage also increases, and in this case, the reflected wave voltage may have a peak until impedance matching between the traveling wave voltage and the reflected wave voltage is achieved by the matching circuit.

Method used

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Embodiment Construction

[0035] Hereinafter, embodiments of the present invention will be described with reference to the drawings.

[0036] figure 1 It is a figure schematically showing the structure of the plasma processing apparatus concerning embodiment of this invention.

[0037] exist figure 1 Among them, the plasma processing apparatus 10 includes a cuboid-shaped chamber 11 (processing chamber) whose interior is decompressed and a high-frequency power source 12. The chamber 11 has a table-shaped susceptor 13 arranged at the bottom and a The shower head 14 and the high-frequency power supply 12 are connected to the base 13 to supply high-frequency power to the base 13 . The susceptor 13 functions as a lower electrode, and the shower head 14 functions as an upper electrode. Thereby, the high-frequency power supplied to the susceptor 13 can be applied to the processing space S between the susceptor 13 and the shower head 14 .

[0038] In the chamber 11, a glass substrate (hereinafter simply ...

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Abstract

The invention relates to a plasma processor capable of correctly detecting arc discharge generation; the plasma processor using plasma to process a substrate (G) comprises the following structures: a chamber (11) supplied with high frequency power so as to generate plasmas in an inner side; a first differentiating circuit (21) used for carrying out time differentiation for travelling wave voltage Vf of the high frequency power; a second differentiating circuit (23) used for carrying out time differentiation for reflected wave voltage Vr of the high frequency power; a comparator (22) calculating dVr/dt-dVf/dt, when the calculated dVr/dt-dVf/dt exceeds the arc discharge detection value, the arc discharge is determined to happen in the chamber (11), so a signal is sent; and a diode, when the dVf/dt is a negative value, the dVf/dt is set to be 0, so the dVr/dt-dVf/dt can be decreased.

Description

technical field [0001] The present invention relates to a plasma processing device which prevents the occurrence of arc discharge. Background technique [0002] In a plasma processing apparatus that performs predetermined processing on a substrate, such as a glass substrate for FPD manufacturing or a semiconductor wafer, using plasma generated by supplying high-frequency power, arc discharge may occur in a processing chamber where plasma is generated. If the arc discharge continues, components, glass substrates, and semiconductor wafers in the processing chamber may be damaged. Therefore, if the occurrence of the arc discharge is detected, it is necessary to promptly stop the supply of high-frequency power for generating plasma. [0003] When arcing occurs, the reflected wave voltage of the high-frequency power peaks. Therefore, the reflected wave voltage is usually monitored, and when the occurrence of the peak is detected, the supply of the high-frequency power is cut off....

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/248H01J37/32
CPCH01J37/32944H01J2237/0206
Inventor 古屋敦城樋川和志
Owner TOKYO ELECTRON LTD
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