Photoelectronic device and image sensor
A technology of optoelectronic devices and image sensors, applied in the direction of electric solid-state devices, photovoltaic power generation, electrical components, etc., can solve the problems of small absorption area, sensitivity deterioration, etc.
Active Publication Date: 2014-08-27
SAMSUNG ELECTRONICS CO LTD
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Problems solved by technology
At present, silicon photodiodes are widely used, but there is usually a problem of sensitivity deterioration because silicon photodiodes have a smaller absorption area due to smaller pixels
Method used
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example 1
[0097] According to at least one example embodiment, ITO was sputtered on the glass substrate to form a 100 nm thick lower electrode. On the lower electrode, a mixture of molybdenum oxide (MoOx, 0-5 m 2 / s) is thermally deposited to form a 1nm thick diffusion barrier layer, silver (Ag) (thermal diffusivity: 1.6x10 -4 m 2 / s) were thermally deposited to form an 11nm thick upper electrode. Then, on the upper electrode, tungsten oxide (WOx, 0<x≤3) was deposited to form a 30nm-thick light-transmitting auxiliary layer to fabricate an optoelectronic device.
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Disclosed are a photoelectronic device (100) including a first electrode (110) including a first metal; an active layer (130) disposed between the first electrode (110) and a second electrode (140); and a diffusion barrier layer (120) disposed between the first electrode (110) and the active layer (130); the diffusion barrier layer (120) including a second metal, wherein the second metal has a thermal diffusivity that is lower than a thermal diffusivity of the first metal, and wherein the first electrode (110) and the diffusion barrier layer (120) are configured to transmit light, and an image sensor including the photoelectronic device.
Description
technical field [0001] Optoelectronic devices and image sensors are disclosed according to various example embodiments. Background technique [0002] Optoelectronic devices refer to devices used to convert light into electrical signals. Optoelectronic devices may include photodiodes, phototransistors, and the like, and may be applied to image sensors, solar cells, and the like. [0003] Typically, image sensors including photodiodes require high resolution and thus have smaller pixels. At present, silicon photodiodes are widely used, but there is generally a problem of sensitivity deterioration because silicon photodiodes have smaller absorption regions due to smaller pixels. Therefore, research into organic materials capable of replacing silicon has been conducted. [0004] Organic materials generally have a high extinction coefficient and selectively absorb light in a specific wavelength region depending on the molecular structure, and thus can replace photodiodes and c...
Claims
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IPC IPC(8): H01L51/42H01L51/44H01L51/46H01L27/30
CPCH01L51/441H01L51/442H01L27/307H10K39/32H10K30/82Y02E10/549Y02P70/50H01L31/10H01L27/146H01L31/04H10K30/00H10K30/81
Inventor 朴敬培金奎植李光熙林东皙林宣晶
Owner SAMSUNG ELECTRONICS CO LTD