Wet etching chemical transfer method for enhancing surface cleanliness of graphene

A graphene surface, wet etching technology, applied in chemical instruments and methods, inorganic chemistry, carbon compounds, etc., can solve problems such as introducing surface states, and achieve the effect of improving cleanliness

Active Publication Date: 2014-09-10
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] In view of the defects of the prior art described above, the object of the present invention is to provide a wet chemical transfer method for improving the cle

Method used

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  • Wet etching chemical transfer method for enhancing surface cleanliness of graphene
  • Wet etching chemical transfer method for enhancing surface cleanliness of graphene

Examples

Experimental program
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Effect test

Embodiment 1

[0023] (1) A continuous graphene film grown on a Cu catalytic substrate ( figure 1 (a)) Deposit a layer of metal film on the surface, and the metal film is one or two, three or even seven alloys of Al, Zn, Fe, Co, Ni, Mo or Cu, and the thickness of the metal layer is 10-1000nm, the preferred thickness of the Al film is 30-100nm; then the preferred recommended surface deposition of a metal Al film layer of PMMA with a thickness of 100-500nm, the preferred thickness is 150-250nm; a layer of 200nm is spin-coated on the surface of the Al film thick polymethyl methacrylate (PMMA) (such as figure 1 (b));

[0024] (2) Put the PMMA / Al / graphene / Cu sample into FeCl 3 On the liquid surface of the etching solution, the PMMA faces upward, and after the Cu is completely etched away, the PMMA / Al / graphene combination is transferred to the Si / SiO 2 on the target substrate (e.g. figure 1 (c));

[0025] (3) Then PMMA / Al / graphene / Si / SiO 2 The combination is immersed in 40-70°C acetone solut...

Embodiment 2

[0029] (1) Deposit a layer of 30nm thick Al film on the surface of the continuous graphene film grown on the Ni catalyst substrate; then spin-coat polymethylmethacrylate (PMMA) with a thickness of 200nm on the surface of the Al film;

[0030] (2) Put the PMMA / Al / graphene / Cu sample into FeCl 3 On the liquid surface of the etching solution, the PMMA faces upwards. After the Cu is completely etched away, the PMMA / Al / graphene sample is transferred to the target substrate Si / SiO 2 on the substrate;

[0031] (3) PMMA / Al / graphene / Si / SiO 2 Samples were immersed in acetone solution at 50°C for 2 hours to remove PMMA;

[0032] (4) Finally Al / graphene / Si / SiO 2 Sample immersion into HNO 3 or FeCl 3 Metal Al is removed from the solution to obtain a transferred continuous graphene film. The result is as figure 2 (b) shown.

Embodiment 3

[0034] (1) Deposit a layer of 30nm thick Al film on the surface of single crystal graphene grown on the Cu catalyst substrate; then spin-coat polymethylmethacrylate (PMMA) with a layer of 200nm thickness on the Al film;

[0035] (2) Put the PMMA / Al / graphene / Cu sample into FeCl 3 On the liquid surface of the etching solution, the PMMA faces upwards. After the Cu is completely etched away, the PMMA / Al / graphene sample is transferred to the Si / SiO 2on the substrate;

[0036] (3) PMMA / Al / graphene / Si / SiO 2 The sample was immersed in acetone solution at 50°C for 2 hours to remove PMMA;

[0037] (4) Finally Al / graphene / Si / SiO 2 Sample immersion into HNO 3 or FeCl 3 Metal Al is removed from the solution to obtain a transferred continuous graphene film. The result is as figure 2 (b) shown.

[0038] Experimental results prove that the method of the present invention is effective and can improve the cleanliness of the graphene surface.

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Abstract

The invention relates to a wet etching chemical transfer method for enhancing surface cleanliness of graphene, which is characterized by comprising the following steps: depositing a metal layer on a metal-substrate-graphene combination, coating an organic colloid layer on the upper surface of the metal, putting in an etching solution to obtain an organic colloid-metal layer-graphene-layer combination, transferring onto a target substrate, removing the organic colloid, and putting the metal-graphene combination into the etching solution until the metal layer is removed, thereby obtaining the transferred graphene. Compared with the traditional wet etching chemical transfer method, the method provided by the invention has the following advantages: the metal layer is deposited on the graphene surface before spin coating of the organic colloid to prevent the direct contact between the graphene and organic colloid, thereby effectively avoiding the residue of the organic colloid on the graphene surface after transfer.

Description

technical field [0001] The invention relates to a wet corrosion chemical transfer method for improving the cleanliness of the graphene surface. The invention belongs to the technical field of graphene transfer. Background technique [0002] In recent years, due to the advantages of high yield and large growth area, the research on the growth of graphene on metal-catalyzed substrates by chemical vapor deposition (CVD) has developed rapidly. Transfer to an insulating substrate to enable further applications. The transfer method commonly used at present is the wet chemical transfer method. The advantage of this method is that it can transfer a large area of ​​complete graphene. The specific operation is to spin coat a layer of organic colloid support layer on the graphene surface. After being corroded, the splitting of the graphene crystal chip is avoided. However, due to the limitations of the existing technology, a small amount of organic glue layer remains during the remo...

Claims

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Application Information

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IPC IPC(8): C01B31/04C01B32/194
Inventor 陈志蓥于广辉张燕辉隋妍萍张浩然张亚欠汤春苗朱博李晓良
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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