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Young's modulus test structure and method of film material

A technology for testing structures and thin-film materials, applied in the direction of applying stable tension/pressure to test the strength of materials, etc., can solve the problems that it is difficult to realize direct loading of test signals and electrical detection, etc., to achieve stable test process and test parameter values, and measurement methods And the method of parameter extraction is simple and the effect of testing method is simple

Active Publication Date: 2017-06-16
SOUTHEAST UNIV
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  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For insulating materials, such as silicon nitride, silicon dioxide, and single crystal silicon or polycrystalline silicon wrapped by silicon dioxide, it is not easy to directly load and detect test signals due to their insulating properties.

Method used

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  • Young's modulus test structure and method of film material
  • Young's modulus test structure and method of film material
  • Young's modulus test structure and method of film material

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Embodiment Construction

[0029] Attached below figure 1 and figure 2 The present invention will be further described.

[0030] The invention provides a test structure for measuring the Young's modulus of thin film materials. The test structure consists of two groups of structures, as figure 1 and figure 2 shown. figure 1 The first group of structures shown includes an electrostatically driven polysilicon cantilever beam 101, an asymmetrical cross beam 102 with an alignment structure made of the film material to be tested, and a double-end fixed beam 103 made of the film material to be tested; Group test structure like figure 2 As shown, a polysilicon cantilever beam 101 and a cross beam 102 are included. The second group of structures is the remaining structure of the first group of structures after removing the supporting beams 103 .

[0031] The polysilicon cantilever beam 101 of the first group structure is formed by connecting the first anchor region 101-1, the slender beam 101-2, the wi...

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Abstract

The invention provides a Young modulus testing structure and method for a thin film material. The testing structure is composed of two sets of structures, wherein in the first set of the structure, a cantilever beam (103) manufactured by the thin film material to be detected is composed of an anchor region (103-2) and a long beam (103-1) which are connected; the long beam (103-1) is vertical to a polycrystalline silicon cantilever beam (101); the free end of the long beam (103-1) is located below a left first convex point (101-5) of the polycrystalline silicon cantilever beam (101); a loading driving part of a force is separated from the Young modulus testing structure manufactured by the thin film material to be detected; the bending deflection of the testing structure is controlled through a geometrical parameter design; the force applied to the Young modulus testing structure is extracted by virtue of a principle that the same parts of the two sets of the testing structures have the same stress; the Young modulus of the thin film material to be detected is calculated through the force and the deflection. The testing structure, a measurement method and a calculation method for parameter extraction are very simple and have wide adaptability, and can be used for testing the Young modulus of a conductive or insulating thin film material.

Description

technical field [0001] The invention provides a testing structure for the Young's modulus of a film material. The invention belongs to the technical field of microelectromechanical system (MEMS) material parameter testing. Background technique [0002] The performance of MEMS is closely related to the material parameters. Due to the influence of the processing process, some material parameters will change. These uncertain factors caused by the processing technology will make device design and performance prediction uncertain and unstable. The purpose of material parameter testing is to be able to measure the material parameters of MEMS devices manufactured by a specific process in real time, monitor the stability of the process, and feed back the parameters to the designer so that the design can be corrected. Therefore, testing without leaving the processing environment and using general-purpose equipment has become a necessary means of process monitoring. The physical pa...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01N3/08
Inventor 李伟华王雷张璐周再发
Owner SOUTHEAST UNIV
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