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Air supply apparatus for plasma processing cavity, and de-clamping method

A technology of gas supply device and processing chamber, applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as difficult substrates, chamber pollution, substrate damage, etc., achieve simple structure, avoid position deviation moving effect

Active Publication Date: 2014-09-10
ADVANCED MICRO FAB EQUIP INC CHINA
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the flow and velocity of the gas are difficult to control, and the gas is too small to lift the substrate
If the gas flow and velocity increase sharply in a short period of time, an excessive force will be generated to blow the substrate away from the machine, causing deviation and damage to the substrate
Substances on the substrate falling into the chamber, such as the focus ring or electrostatic chuck, can also contaminate the chamber

Method used

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  • Air supply apparatus for plasma processing cavity, and de-clamping method
  • Air supply apparatus for plasma processing cavity, and de-clamping method

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Embodiment Construction

[0032] The specific embodiments of the present invention will be described below in conjunction with the accompanying drawings.

[0033] figure 1 is a schematic structural diagram of a gas supply system for a plasma processing chamber in the prior art. Such as figure 1 As shown, a process gas is introduced into the plasma chamber 100, and the process gas is excited to generate plasma due to the introduction of radio frequency energy, so as to perform related processes on the substrate 101 placed on the electrostatic chuck 102, such as etching and deposition Wait. The gas supply device provided in the prior art includes several gas channels 103, and the gas channels 103 are further connected in series with a control device 105 and a gas supply device 106 in series. Wherein, the gas supply device 106 is used for continuously supplying the first gas. A valve 107 is also provided upstream of the control device 105 .

[0034] A brief description of prior art de-clamping mechan...

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Abstract

The invention provides an air supply apparatus for a plasma processing cavity, and a de-clamping method. The air supply apparatus is arranged below a substrate and comprises: at least one gas channel which is arranged in the pedestal main body for accommodating a first gas; the gas channel is connected with a control device; the downstream part of the control device is connected with a gas supply device which can supply the first gas and conveying the first gas to the gas channel; and each gas channel is provided with a spaying first gas orifice, the first gas in the gas channel can spray the first gas between the bottom surface of a substrate and a static chuck through the spraying first gas orifice, the upstream part of the control device is also connected with a parallel loop, and the loop comprises a current limiting hole and a valve which are connected in parallel. The declamping method is safe and effective and avoids position offset of the substrate during a declamping process due to rapid increase of the first gas in a short period.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a gas supply device and a declamping method for a plasma processing chamber. Background technique [0002] In the field of semiconductor manufacturing, semiconductor process parts need to undergo a series of processes in a semiconductor processing system to form a predetermined structure, such as a plasma processing chamber or a plasma chemical vapor deposition machine. In order to meet the process requirements, it is not only necessary to strictly control the process, but also involves the loading and unclamping of semiconductor process parts. The loading and unclamping of semiconductor process parts is a key step in semiconductor process part processing. [0003] During the processing of the substrate in the plasma processing chamber, the substrate is placed on an electrostatic chuck in the chamber. A DC electrode is set under the electrostatic chuck. When the DC el...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/683
CPCH01L21/6719H01L21/6831
Inventor 万磊倪图强周旭升
Owner ADVANCED MICRO FAB EQUIP INC CHINA
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