A crystalline silicon solar cell passivation material Al2O3 concentration gradient doped ZNO thin film and its preparation method

A technology of solar cells and concentration gradients, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems that passivation films cannot be put into practical use on a large scale and cannot achieve passivation effects, and achieve strong chemical passivation and field passivation Effect, excellent passivation effect, effect of improving minority carrier lifetime

Inactive Publication Date: 2016-01-13
LIAONING UNIVERSITY OF TECHNOLOGY
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, with a certain thickness of Al 2 o 3 The thin film (>10nm) must be introduced into the laser groove process to make the Al back field contact with the -p-Si to make a good ohmic contact; while the thin film (2 o 3 The passivation film has been unable to be put into practical use on a large scale

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A crystalline silicon solar cell passivation material Al2O3 concentration gradient doped ZNO thin film and its preparation method
  • A crystalline silicon solar cell passivation material Al2O3 concentration gradient doped ZNO thin film and its preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] There is a layer of Al with a thickness of 1nm on the silicon wafer 2 o 3 thin film layer, in Al 2 o 3 The thin film layer has a concentration gradient doped ZnO thin film layer, the Al 2 o 3 The concentration gradient doped ZnO thin film layer is composed of Al element, Zn element and O element, among which Al 2 o 3 Concentration Gradient Doping of Al in ZnO Thin Film Layer 2 o 3The proportion decreases from bottom to top, and its resistivity decreases successively. The content of Al element is 0.1%~10%, the thickness is 100nm, and the resistivity is 10Ω·cm~1?10 -5 Ω·cm.

[0031] Specific steps are as follows:

[0032] (1) Place the silicon wafer in the deposition chamber of the atomic deposition equipment, and vacuum the deposition chamber. The deposition temperature is 150°C, the pressure is 0.15 torr, the gas flow rate is 40 sccm, and Al(CH 3 ) 3 The precursor was purged for 20ms, and the deposition chamber was cleaned with high-purity nitrogen for 25s, a...

Embodiment 2

[0037] There is a layer of Al with a thickness of 10nm on the silicon wafer 2 o 3 thin film layer, in Al 2 o 3 The thin film layer has a concentration gradient doped ZnO thin film layer, the Al 2 o 3 The concentration gradient doped ZnO thin film layer is composed of Al element, Zn element and O element, among which Al 2 o 3 Concentration Gradient Doping of Al in ZnO Thin Film Layer 2 o 3 The proportion decreases from bottom to top, and its resistivity decreases successively. The content of Al element is 0.1%~10%, the thickness is 30nm, and the resistivity is 10Ω·cm~1?10 -5 Ω·cm.

[0038] The specific steps are as follows:

[0039] (1) Place the silicon wafer in the deposition chamber of the atomic deposition equipment, evacuate the deposition chamber, and inject Al(CH 3 ) 3 Precursor, cleaning the deposition chamber with high-purity nitrogen gas and passing water vapor into the deposition chamber as an oxygen source, and then cleaning the deposition chamber with hi...

Embodiment 3

[0044] There is a layer of Al with a thickness of 5nm on the silicon wafer 2 o 3 thin film layer, in Al 2 o 3 The thin film layer has a concentration gradient doped ZnO thin film layer, the Al 2 o 3 The concentration gradient doped ZnO thin film layer is composed of Al element, Zn element and O element, among which Al 2 o 3 Concentration Gradient Doping of Al in ZnO Thin Film Layer 2 o 3 The proportion decreases from bottom to top, and its resistivity decreases successively. The content of Al element is 0.1%~10%, the thickness is 50nm, and the resistivity is 10Ω·cm~1?10 -5 Ω·cm.

[0045] The specific steps are as follows:

[0046] (1) Place the silicon wafer in the deposition chamber of the atomic deposition equipment, evacuate the deposition chamber, and inject Al(CH 3 ) 3 Precursor, cleaning the deposition chamber with high-purity nitrogen gas and passing water vapor into the deposition chamber as an oxygen source, and then cleaning the deposition chamber with hig...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
electrical resistivityaaaaaaaaaa
Login to view more

Abstract

A crystalline silicon solar cell passivation material Al2O3 concentration gradient doped ZnO thin film and its preparation method, depositing Al2O3 on the surface of a silicon wafer by atomic deposition to form an Al2O3 layer with a thickness of 1nm to 10nm; and then continuing to perform n1 times on the Al2O3 layer ZnO deposition, and then carry out 1 Al2O3 deposition to complete an Al2O3-doped ZnO deposition; repeat the deposition according to the above Al2O3-doped ZnO deposition method, wherein the number of ZnO depositions is one more than the previous ZnO deposition to form a thickness The ZnO layer is doped with a concentration gradient of 30nm~100nm Al2O3; after the deposition is completed, the silicon wafer is taken out and annealed to obtain a passivation film for a crystalline silicon solar cell. The invention has the advantages of reasonable film design, easy operation of the preparation process, excellent passivation effect on crystalline silicon solar cells, and high photoelectric conversion efficiency of the cells.

Description

technical field [0001] The invention belongs to the technical field of solar cell preparation, in particular to a solar cell passivation material Al 2 o 3 Concentration gradient doped ZnO thin film and its preparation method. Background technique [0002] Crystalline silicon solar cells have become the most widely used solar cells due to their mature technology and high photoelectric conversion efficiency. However, in the preparation process of crystalline silicon cells, processes such as cutting silicon wafers and preparing light-trapping structures will cause damage to the surface of silicon wafers. -The recombination rate of hole pairs, thereby reducing the collection of charges by electrodes and reducing the efficiency of crystalline silicon solar cells. Al 2 o 3 Thin film has dual passivation effects of chemical passivation and field passivation, and is currently the most excellent passivation material for crystalline silicon solar cells. It has been applied to PER...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0216H01L31/18
CPCH01L31/02168H01L31/1868Y02E10/50Y02P70/50
Inventor 唐立丹王冰冯嘉恒王建中
Owner LIAONING UNIVERSITY OF TECHNOLOGY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap