A two-terminal constant current device

A constant-current device, depletion-mode transistor technology, applied in instruments, regulating electrical variables, control/regulating systems, etc., can solve the problems of poor temperature stability, narrow constant current region, low breakdown voltage, etc., to achieve temperature stability High, fast response, high breakdown voltage effect

Active Publication Date: 2016-08-17
GPOWER SEMICON
View PDF10 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In view of this, an embodiment of the present invention provides a two-terminal constant current device to solve the problems of slow response speed, low breakdown voltage, narrow constant current region, poor temperature stability and low temperature resistance of current two-terminal constant current devices.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A two-terminal constant current device
  • A two-terminal constant current device
  • A two-terminal constant current device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] figure 1 It is a schematic diagram of a two-terminal constant current device provided in Embodiment 1 of the present invention, see figure 1 . The two-terminal constant current device includes: a first N-type depletion transistor T1 and a resistor R, wherein the source of the first N-type depletion transistor is connected to the first end of the resistor R, and the first The gate of an N-type depletion transistor T1 is connected to the second end of the resistor R, wherein the first N-type depletion transistor T1 is a gallium nitride depletion transistor, and the resistor R is separated resistor or a resistor integrated with the first N-depletion transistor T1.

[0029] In this embodiment, the two-terminal constant current device further includes a first-type electrode and a second-type electrode. Wherein, the first-type electrode is the anode PP of the two-terminal constant current device, the drain of the first N-type depletion transistor T1 is used as the anode PP...

Embodiment 2

[0044] image 3 It is a schematic diagram of a two-terminal constant current device provided in Embodiment 2 of the present invention. This embodiment is based on Embodiment 1, see image 3 , the two-terminal constant current device includes a first N-type depletion transistor T1, a second N-type depletion transistor T2 and a resistor R, wherein the drain of the second N-type depletion transistor T2 is connected to the The source of the first N-type depletion transistor T1 is connected, the source of the second N-type depletion transistor T2 is connected to the first end of the resistor R, and the second N-type depletion transistor T2 The gate of the gate is connected to the gate of the first N-type depletion transistor T1 and then connected to the second end of the resistor R. Wherein, the first N-type depletion transistor T1 and the second N-type depletion transistor T2 are gallium nitride depletion transistors, and the resistor R is a separate resistor or connected with t...

Embodiment 3

[0054] Figure 4 It is a schematic diagram of a two-terminal constant current device provided by Embodiment 3 of the present invention. This embodiment is based on the above-mentioned embodiment, see Figure 4 , the two-terminal constant current device includes a first N-type depletion transistor T1, a second N-type depletion transistor T2 and a resistor R. Wherein, the second N-type depletion transistor T2 is composed of N third N-type depletion transistors T3. The third N-type depletion transistor T3 is a gallium nitride depletion transistor, wherein N is an integer greater than or equal to 2.

[0055] The gates of the N third N-type depletion transistors T3 are connected together as the gates of the second N-type depletion transistor T2, and the gates of the first third N-type depletion transistor T31 The drain serves as the drain of the second N-type depletion transistor T2, and the drain of each third N-type depletion transistor T3 is connected to the source of the pre...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The present invention disclosed a two -terminal constant current device, including the first exhaustive crystal tube and resistance, which is connected to the first end of the resistance to the first end of the resistance.The grille of the transistor is connected to the second end of the resistance. Among them, the first exhaustive crystal tube is the depletion of the nitride.The present invention uses the negative feedback effect of the resistor to achieve the constant flow effect of the second -term constant current device. The characteristics of the nitrogen -nitride crystal tube reaction speed, the high pressure resistance to bearing can be affected by small temperature, so that the second -terminal constant current flowsThe device has the advantages of fast response speed, high breakdown voltage, high temperature resistance, good constant current characteristics, and high temperature stability.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a two-terminal constant current device. Background technique [0002] A two-terminal constant current device is a device that provides a stable current when the voltage changes, which is equivalent to a constant current source or a current limiting circuit for the maximum peak current. Even if the voltage is unstable or the load resistance changes greatly, it can guarantee The supply current is stable. [0003] The constant current source composed of constant current devices has the advantages of simple structure, good constant current characteristics and convenient use, which makes the constant current devices have a wide range of applications. In the prior art, commonly used semiconductor constant current devices are devices based on bipolar transistors or field effect transistors. Among them, devices based on field effect transistors have the advantages of low noise an...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): G05F1/56
Inventor 李元
Owner GPOWER SEMICON
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap