Magnetic memory, providing method and programming method thereof

A magnetic memory, magnetic moment technology, applied in the field of magnetic memory and its provision and programming, can solve the problem of reducing the read signal and the like

Active Publication Date: 2014-09-17
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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When in this state, there is a cancellation of reluctance

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  • Magnetic memory, providing method and programming method thereof
  • Magnetic memory, providing method and programming method thereof
  • Magnetic memory, providing method and programming method thereof

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Embodiment Construction

[0030] Exemplary embodiments relate to magnetic junctions that may be used in magnetic devices, such as magnetic memories, and devices utilizing such magnetic junctions. The following description is given to enable one of ordinary skill in the art to make and use the invention, and the following description is provided in the patent application and its claimed content. Various modifications to the exemplary embodiments and the general principles and features described herein will be readily apparent. Exemplary embodiments are described primarily in terms of particular methods and systems provided in particular implementations. However, the methods and systems described will operate effectively in other implementations. Expressions such as "an exemplary embodiment", "one embodiment" and "another embodiment" may refer to the same embodiment or different embodiments as well as multiple embodiments. Embodiments will be described with respect to systems and / or devices having cert...

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Abstract

A magnetic memory, a providing method, and a programming method are described. The magnetic memory includes dual magnetic junctions and spin-orbit interaction (SO) active layer(s). Each dual magnetic junction includes first and second reference layers, first and second nonmagnetic spacer layers and a free layer. The free layer is magnetic and between the nonmagnetic spacer layers. The nonmagnetic spacer layers are between the corresponding reference layers and the free layer. The SO active layer(s) are adjacent to the first reference layer of each dual magnetic junction. The SO active layer(s) exert a SO torque on the first reference layer due to a current passing through the SO active layer(s) substantially perpendicular to a direction between the SO active layer(s) and the first reference layer. The first reference layer has a magnetic moment changeable by at least the SO torque. The free layer is switchable using a spin transfer write current driven through the dual magnetic junction.

Description

technical field [0001] Exemplary embodiments relate to magnetic memories, methods of providing them, and methods of programming them. Background technique [0002] Magnetic memories, especially Magnetic Random Access Memory (MRAM), have attracted increasing attention due to their potential for high read / write speed during operation, good endurance, non-volatility, and low power consumption. focus on. MRAM can store information using magnetic materials as an information recording medium. One type of MRAM is spin transfer torque random access memory (STT-MRAM). STT-MRAM utilizes magnetic junctions that are written at least in part by a current being driven through the magnetic junction. A spin-polarized current driven through the magnetic junction exerts a spin torque on the magnetic moment in the magnetic junction. As a result, a layer with a magnetic moment responsive to spin torque can be switched to a desired state. [0003] E.g, figure 1 A conventional dual magnetic...

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Application Information

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IPC IPC(8): H01L43/08H01L43/06H01L43/12H01L43/14G11C11/16
CPCG11C11/161G11C11/1659G11C11/1673G11C11/1675G11C11/18
Inventor A.V.克瓦尔科夫斯基D.阿帕尔科夫M.T.克鲁恩比
Owner SAMSUNG ELECTRONICS CO LTD
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