Semiconductor device and forming method thereof
A semiconductor and device technology, applied in the field of semiconductor devices and their formation, can solve problems such as poor transistor performance, and achieve the effect of ensuring electrical isolation performance and improving electrical performance
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no. 1 example
[0065] refer to Figure 8 , and combined with the reference Figure 7 , performing step S71, providing a semiconductor substrate 300, an isolation structure 303 is formed in the semiconductor substrate 300, and the isolation structure 303 separates the semiconductor substrate 300 into a first active region I and a second active region II, wherein , the types of the first active region I and the second active region II are opposite. In this embodiment, the first active region I is defined as a P-type active region, and the second active region II is defined as an N-type active region.
[0066] In a specific embodiment, the semiconductor substrate 300 is a silicon substrate, a germanium substrate, a silicon nitride substrate, or a silicon-on-insulator substrate, etc.; or it may also include other materials, such as gallium arsenide and other III-V Family compounds. Those skilled in the art can select the type of the semiconductor substrate 300 according to the semiconductor d...
no. 2 example
[0090] refer to Figure 7 , to execute step S71 and step S72, correspondingly refer to the execution of step S71 and step S72 in the first embodiment, and the specific process, structure and structure position are the same.
[0091] refer to Figure 19 , and combined with the reference Figure 7 , step S73 is executed to form a first capping layer 505 covering the substrate 500 , the first gate 501 and the second gate 502 . In this implementation, the first semiconductor material formed in the substrate 500 on both sides of the first gate 501 is carbon silicon, and the first cap layer 505 includes a silicon nitride layer 551, silicon oxide on the silicon nitride layer 551 Layer 552. Optionally, before forming the first cap layer 505, a thinner silicon oxide layer 506 is formed to cover the first active region I and the second active region II. The thinner silicon oxide layer 506 provides a good buffer surface for depositing the silicon nitride layer 551 , for details, plea...
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